Probing the Electronic Properties of Monolayer MoS via Interaction with Molecular Hydrogen
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H) and monolayer MoS field effect transistors (MoS FET), aiming for sensing application. The MoS FET exhibits a response to H that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H sensors based on MoS FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS monotonically increases as a function of the H concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H adsorption driven by interaction with sulfur vacancies in the MoS surface (VS). This description is in agreement with related density functional theory studies about H adsorption on MoS. Finally, measurements on partially defect-passivated MoS FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H interaction with the MoS. These findings provide insights for futures applications in catalytic process between monolayer MoS and H and also introduce MoS FETs as promising H sensors.