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Researcher profile

André Dankert

André Dankert contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

8 published item(s)

preprint2016arXiv

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the field is the realization of all electrical methods to control the spin polarization and spin transistor operation at ambient temperature. For this purpose, two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS$_2$). Here we combine graphene and MoS$_2$ in a van der Waals heterostructure to realize the electric control of the spin polarization and spin lifetime, and demonstrated a spin field-effect transistor (spin-FET) at room temperature in a non-local measurement geometry. We observe electrical gate control of the spin valve signal due to pure spin transport and Hanle spin precession signals in the graphene channel in proximity with MoS$_2$ at room temperature. We show that this unprecedented control over the spin polarization and lifetime stems from the gate-tuning of the Schottky barrier at the MoS$_2$/graphene interface and MoS$_2$ channel conductivity leading to spin interaction with high SOC material. The all-electrical creation, transport and control of the spin polarization in a spin-FET device at room temperature is a substantial step in the field of spintronics. It opens a new platform for the interplay of spin, charge and orbital degrees of freedom for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the Schottky barrier in non-degenerate p-type Si, we observed a systematic sign reversal of the Hanle signal in the low bias regime. This dramatic change in the spin injection and detection processes with increased Schottky barrier resistance may be due to a decoupling of the spins in the interface states from the bulk band of Si, yielding a transition from a direct to a localized state assisted tunneling. Our study provides a deeper insight into the spin transport phenomenon, which should be considered for electrical spin injection into any semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications

Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We observe a reduced of Schottky barrier < 50 meV by using TiO${_2}$/Co contacts, which could be further tuned by gate voltages. Eminently a good transistor performance is achieved in BP devices, with drain current modulation on the order of four to six orders of magnitude. The charge carrier mobility is found to be $\sim$ 155 and 0.18 cm${^2}$ V${^{-1}}$ s${^{-1}}$ for holes and electrons respectively at room temperature. Furthermore, magnetoresistance calculations reveal that the resistances of the BP device with applied gate voltages are in the appropriate range for injection and detection of spin polarized holes. Our results demonstrate the prospect of engineering BP nanolayered devices for efficient nanoelectronic and spintronic applications.

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preprint2014arXiv

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron motilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin-polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene.

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preprint2014arXiv

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

Topological insulators (TIs) are a new class of quantum materials that exhibit spin momentum locking (SML) of massless Dirac fermions in the surface states. Usually optical methods, such as angle and spin-resolved photoemission spectroscopy, have been employed to observe the helical spin polarization in the surface states of three-dimensional (3D) TIs up to room temperatures. Recently, spin polarized surface currents in 3D TIs were detected by electrical methods using ferromagnetic (FM) contacts in a lateral spin-valve measurement geometry. However, probing the spin texture with such electrical approaches is so far limited to temperatures below 125K, which restricts its application potential. Here we demonstrate the room temperature electrical detection of the spin polarization on the surface of Bi$_2$Se$_3$ due to SML by employing spin sensitive FM tunnel contacts. The current-induced spin polarization on the Bi$_2$Se$_3$ surface is probed at room temperature by measuring a spin-valve signal while switching the magnetization direction of the FM detector. The spin signal increases linearly with current bias, reverses sign with current direction, exhibits a weak temperature dependence and decreases with higher TI thickness, as predicted theoretically. Our results demonstrate the electrical detection of the spin polarization on the surface of 3D TIs, which could lead to innovative spin-based quantum information technology at ambient temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Transport and Precession in Graphene measured by Nonlocal and Three-Terminal Methods

We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermal Creation of Electron Spin Polarization in n-Type Silicon

Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 $μ$V, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power.

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preprint2014arXiv

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated over a chip scale, we show tunnel magneto resistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.

0 citations0 reviewsNo code linkedOpen access