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Researcher profile

Amartya S. Banerjee

Amartya S. Banerjee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phcond-mat.mtrl-sciphysics.comp-phcond-mat.dis-nncond-mat.mes-hall

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Published work

4 published item(s)

preprint2026arXiv

Electronic structure prediction of medium and high entropy alloys across composition space

We propose machine learning (ML) models to predict the electron density -- the fundamental unknown of a material's ground state -- across the composition space of concentrated alloys. From this, other physical properties can be inferred, enabling accelerated exploration. A significant challenge is that the number of sampled compositions and descriptors required to accurately predict fields like the electron density increases rapidly with species. To address this, we employ Bayesian Active Learning (AL), which minimizes training data requirements by leveraging uncertainty quantification capabilities of Bayesian Neural Networks. Compared to strategic tessellation of the composition space, Bayesian-AL reduces the number of training data points by a factor of 2.5 for ternary (SiGeSn) and 1.7 for quaternary (CrFeCoNi) systems. We also introduce easy-to-optimize, body-attached-frame descriptors, which respect physical symmetries and maintain approximately the same descriptor-vector size as alloy elements increase. Our ML models demonstrate high accuracy and generalizability in predicting both electron density and energy across composition space.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Density functional theory method for twisted geometries with application to torsional deformations in group-IV nanotubes

We present a real-space formulation and implementation of Kohn-Sham Density Functional Theory suited to twisted geometries, and apply it to the study of torsional deformations of X (X = C, Si, Ge, Sn) nanotubes. Our formulation is based on higher order finite difference discretization in helical coordinates, uses ab intio pseudopotentials, and naturally incorporates rotational (cyclic) and screw operation (i.e., helical) symmetries. We discuss several aspects of the computational method, including the form of the governing equations, details of the numerical implementation, as well as its convergence, accuracy and efficiency properties. The technique presented here is particularly well suited to the first principles simulation of quasi-one-dimensional structures and their deformations, and many systems of interest can be investigated using small simulation cells containing just a few atoms. We apply the method to systematically study the properties of single-wall zigzag and armchair group-IV nanotubes, as they undergo twisting. For the range of deformations considered, the mechanical behavior of the tubes is found to be largely consistent with isotropic linear elasticity, with the torsional stiffness varying as the cube of the nanotube radius. Furthermore, for a given tube radius, this quantity is seen to be highest for carbon nanotubes and the lowest for those of tin, while nanotubes of silicon and germanium have intermediate values close to each other. We also describe different aspects of the variation in electronic properties of the nanotubes as they are twisted. In particular, we find that akin to the well known behavior of armchair carbon nanotubes, armchair nanotubes of silicon, germanium and tin also exhibit bandgaps that vary periodically with imposed rate of twist, and that the periodicity of the variation scales in an inverse quadratic manner with the tube radius.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Machine learning based prediction of the electronic structure of quasi-one-dimensional materials under strain

We present a machine learning based model that can predict the electronic structure of quasi-one-dimensional materials while they are subjected to deformation modes such as torsion and extension/compression. The technique described here applies to important classes of materials such as nanotubes, nanoribbons, nanowires, miscellaneous chiral structures and nano-assemblies, for all of which, tuning the interplay of mechanical deformations and electronic fields is an active area of investigation in the literature. Our model incorporates global structural symmetries and atomic relaxation effects, benefits from the use of helical coordinates to specify the electronic fields, and makes use of a specialized data generation process that solves the symmetry-adapted equations of Kohn-Sham Density Functional Theory in these coordinates. Using armchair single wall carbon nanotubes as a prototypical example, we demonstrate the use of the model to predict the fields associated with the ground state electron density and the nuclear pseudocharges, when three parameters - namely, the radius of the nanotube, its axial stretch, and the twist per unit length - are specified as inputs. Other electronic properties of interest, including the ground state electronic free energy, can then be evaluated with low-overhead post-processing, typically to chemical accuracy. We also show how the nuclear coordinates can be reliably determined from the pseudocharge field using a clustering based technique. Remarkably, only about 120 data points are found to be enough to predict the three dimensional electronic fields accurately, which we ascribe to the symmetry in the problem setup, the use of low-discrepancy sequences for sampling, and presence of intrinsic low-dimensional features in the electronic fields. We comment on the interpretability of our machine learning model and discuss its possible future applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A Chirality-Based Quantum Leap

Chiral degrees of freedom occur in matter and in electromagnetic fields and constitute an area of research that is experiencing renewed interest driven by recent observations of the chiral-induced spin selectivity (CISS) effect in chiral molecules and engineered nanomaterials. The CISS effect underpins the fact that charge transport through nanoscopic chiral structures favors a particular electronic spin orientation, resulting in large room-temperature spin polarizations. Observations of the CISS effect suggest opportunities for spin control and for the design and fabrication of room-temperature quantum devices from the bottom up, with atomic-scale precision. Any technology that relies on optimal charge transport, including quantum devices for logic, sensing, and storage, may benefit from chiral quantum properties. These properties can be theoretically and experimentally investigated from a quantum information perspective, which is presently lacking. There are uncharted implications for the quantum sciences once chiral couplings can be engineered to control the storage, transduction, and manipulation of quantum information. This forward-looking perspective provides a survey of the experimental and theoretical fundamentals of chiral-influenced quantum effects, and presents a vision for their future roles in enabling room-temperature quantum technologies.

0 citations0 reviewsNo code linkedOpen access