Source author record

Amandeep Kaur

Amandeep Kaur appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2022arXiv

Photosensitive SrMnO3

In recent years, photosensitive materials have been in huge demand because of their fascinating ability to convert absorbed photon energy to generate strain and henceforth tuning the physical properties. In this report we detect the photosensitive activity of SrMnO3. Using the power dependent and temperature dependent Raman study with different laser sources having wavelengths across the optical band gap of SrMnO3, we divulge the photosensitive character of SrMnO3 thin films. Upon laser light illumination, Raman modes soften and softening further increases with increase in laser power. Similar kind of mode variation is observed with increasing temperature at fixed laser power. XAS in presence of laser illumination, reveals the change in crystal field splitting associated with mode softening.

preprint2010arXiv

First-Principles Study of Electronic and Vibrational Properties of BaHfN$_2$

The transition metal nitride BaHfN$_2$, which consists of weakly bonded neutral slabs of closed shell ions, has structural and chemical similarities to other layered nitrides which have impressive superconducting T$_c$ when electron doped: A$_x$HfNCl, A$_x$ZrNCl, A$_x$TiNCl, with $T_c= 25.5$, $15.2$ and $16.5$ K, respectively for appropriate donor (A) concentrations $x$. These similarities suggest the possibility of BaHfN$_2$ being another relatively high T$_c$ nitride upon doping, with effects of structure and the role of specific transition metal ions yet to be understood. We report first-principles electronic structure calculations for stoichiometric BaHfN$_2$ using density functional theory with plane-wave basis sets and separable dual-space Gaussian pseudopotentials. An indirect band gap of 0.8 eV was obtained and the lowest conduction band is primarily of Hf 5$d_{xy}$ character, similar to $β$-ZrNCl and $α$-TiNCl. The two N sites, one in the Hf layer and another one in the Ba layer, were found to have very anisotropic Born effective charges (BEC):deviations from the formal charge (-3) are opposite for the two sites, and opposite for the two orientations (in-plane, out of plane). LO-TO splittings and comparison of BECs and dielectric constant tensors to those of related compounds are discussed, and the effect of electron doping on the zone-center phonons is reported.