Combined modeling and experimental characterization of Mn segregation and spinodal decomposition along dislocation lines in Fe-Mn alloys
Mn enrichment at dislocations in Fe-Mn alloys due to segregation and spinodal decomposition along the dislocation line is studied via modeling and experimental characterization. To model these phenomena, both finite-deformation microscopic phase-field chemomechanics (MPFCM) and Monte Carlo molecular dynamics (MCMD) are employed. MPFCM calibration is carried out with the same Fe-Mn MEAM-based potential used in MCMD, as well as CALPHAD data. Simulation results for Mn segregation to, and spinodal decomposition along, straight screw and edge dislocations as well as dislocation loops, are compared with characterization results from atom probe tomography (APT) for two Fe-Mn alloy compositions. In contrast to classical Volterra dislocation theory, both MPFCM and MCMD predict a non-zero hydrostatic stress field in screw cores. Being of much smaller magnitude than the hydrostatic stress in straight edge cores, much less solute segregates to screw than to edge cores. In addition, the segregated amount in screw cores is below the critical concentration of 0.157 for the onset of spinodal decomposition along the line. Results from MPFCM-based modeling imply that the concentration dependence of the solute misfit distortion and resulting dependence of the elastic energy density on concentration have the strongest effect. The maximum amount of Mn segregating to straight edge dislocations predicted by MPFCM agrees well with APT results. The MPFCM model for Fe-Mn predicts little or no variation in Mn concentration along a straight dislocation line, in contrast to the APT results. As shown by the example of a dislocation loop in the current work, a change in the hydrostatic stress along the line due to changing character of dislocation does lead to a corresponding variation in Mn concentration. Such a variation in Mn concentration can also then be expected along a dislocation line with kinks or jogs.