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Alireza Saffarzadeh

Alireza Saffarzadeh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2021arXiv

Nearly perfect spin-filtering in curved two-dimensional topological insulators

The spintronic properties of curved nanostructures derived from two-dimensional topological insulators (2DTI's) are explored theoretically with density functional theory-based (DFT) calculations and tight-binding models. We show that curved geometries make it possible to manipulate electron spins in ways that are not available for planar 2DTI devices. We predict that, unlike planar 2DTI devices, curved 2DTI-related nanostructures can function as highly effective {\em two}-terminal spin filters even in the absence of magnetic fields. We construct a generalization to curved geometries of our previous tight binding model of the wide band gap planar 2DTI bismuthene on SiC. The resulting model, applied to an ideal dome geometry with a free edge, is shown to exhibit quantum spin Hall physics, including spin polarized edge states. The model predicts nearly perfect spin filtering by the dome for a particular two-terminal geometry in the absence of magnetic fields. Our DFT calculations predict a Bi$_{105}$Si$_{105}$H$_{15}$ dome of bismuthene with adsorbed silicon and hydrogen atoms to be stable. Our tight binding model, adjusted to match density of states given by DFT calculations, predicts that the Bi$_{105}$Si$_{105}$H$_{15}$ dome should exhibit quantum spin Hall physics and very effective spin filtering in a two-terminal arrangement.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gas adsorption effects on electronic and magnetic properties of triangular graphene antidot lattices

The adsorption effects of small molecules (H$_{2}$O, CO, NH$_{3}$, NO$_{2}$) and large molecules (Tetracyanoquinodimethane (TCNQ) and Tetrafluoro-tetracyanoquinodimethane (F4TCNQ)) on electronic and magnetic properties of two triangular graphene antidot lattices (GALs), $[10,3,6]_{RTA}$ and $[10, 5]_{ETA}$, are investigated by means of first-principles calculations. We find that CO, NO$_{2}$, TCNQ, and F4TCNQ molecules are chemisorbed by both antidots, whereas NH$_{3}$ is physisorbed (chemisorbed) by $[10, 5]_{ETA}$ ($[10,3,6]_{RTA}$) structure. H$_{2}$O, CO, NH$_{3}$ molecules reveal no significant effect on electronic and magnetic properties of these antidot structures. The adsorbed NO$_{2}$ molecules affect the energy gap of GALs by changing their electronic structure from semiconducting to half-metal nature. This suggests that both GALs can act as efficient NO$_{2}$ sensors. The adsorption of TCNQ and F4TCNQ molecules on GALs induces flat bands in the vicinity of the Fermi energy and also turn the electronic structure of antidot lattices to half-metallicity. Among the small and large molecules, NO$_{2}$ molecules induce the most total magnetic moment, paving the way to make magnetic GAL-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mechanisms of jump to contact and conductance plateau formation in copper atomic junctions in vacuum and aqueous environments

The interplay between groups of water molecules and single-atom contacts, as reflected in the electrical conductances and mechanical forces of copper atomic junctions, is explored by means of first-principles theory and semi-empirical calculations. We study the influence of the atomic geometries of copper electrodes with pyramidal and non-crystalline structures in the presence and absence of water on the conductance profiles as the electrodes approach each other. It is shown that the atomic arrangements of nano-contacts have crucial effects on the formation of plateaus and the conductance values. Groups of hydrogen bonded water molecules bridge the junction electrodes before a direct Cu-Cu contact between the electrodes is made. However, the bridging of the two copper electrodes by a single H$_{2}$O molecule only occurs in the junctions with pyramidal electrodes. Our findings reveal that the presence of H$_{2}$O molecules modifies strongly the conductance profile of these junctions. In the absence of water molecules, the pyramidal junctions exhibit continuous transitions between integer conductance plateaus, while in the presence of H$_{2}$O molecules, these junctions show abrupt jump to contact behavior and no well-defined conductance plateaus. By contrast, in the absence of H$_{2}$O molecules, the non-crystalline junctions display jump to contact behavior and no well-defined plateaus, while in the presence of H$_{2}$O molecules they exhibit a jump to contact and abrupt transitions between fractional and integer plateaus.

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preprint2016arXiv

Atomic defect states in monolayers of MoS$_2$ and WS$_2$

The influence of atomic vacancy defects at different concentrations on electronic properties of MoS$_2$ and WS$_2$ monolayers is studied by means of Slater-Koster tight-binding model with non-orthogonal $sp^3d^5$ orbitals and including the spin-orbit coupling. The presence of vacancy defects induces localized states in the bandgap of pristine MoS$_2$ and WS$_2$, which have potential to modify the electronic structure of the systems, depending on the type and concentration of the defects. It is shown that although the contribution of metal (Mo or W) $d$ orbitals is dominant in the formation of midgap states, the sulphur $p$ and $d$ orbitals have also considerable contribution in the localized states, when metal defects are introduced. Our results suggest that Mo and W defects can turn the monolayers into p-type semiconductors, while the sulphur defects make the system a n-type semiconductor, in agreement with ab initio results and experimental observations.

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preprint2015arXiv

Coulomb bound states and resonances due to groups of Ca dimers adsorbed on suspended graphene

The electronic bound states and resonances in the vicinity of the Dirac point energy due to the adsorption of calcium dimers on a suspended graphene monolayer are explored theoretically using density functional theory (DFT) and an improved extended Hückel model that includes electrostatic potentials. The Mulliken atomic charges and the electrostatic potentials are obtained from DFT calculations and reveal charge transfer from the Ca dimers to the graphene which is responsible for the emergence of resonant states in the electronic spectrum. The number of resonant states increases as the number of adsorbed dimers is increased. We find a bound "atomic-collapse" state in the graphene local density of states, as has been observed experimentally [Wang \textit{et al.}, Science {\bf 340}, 734 (2013)]. We find the formation of the atomic-collapse state and its population with electrons to require fewer adsorbed Ca dimers than in the experiment, possibly due to the different spacing between dimers and the dielectric screening by a boron nitride substrate in the experiment. We also predict the onset of filling of a second atomic-collapse state with electrons when six Ca dimers are adsorbed on the suspended graphene monolayer. Experiments testing these predictions would be of interest.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation of fully spin-polarized currents in three-terminal graphene-based transistors

We propose three-terminal spin devices with graphene nanoribbons (terminals) and a graphene flake (channel) to generate a highly spin-polarized current without an external magnetic field or ferromagnetic electrodes. The Hubbard repulsion within the mean-field approximation plays the main role to separate the unpolarized electric current at the source terminal into spin-polarized currents at the drain terminals. It is shown that by modulating one of the drain voltages, a fully spin-polarized current can be generated in the other drain terminal. In addition, the geometry of the channel and the arrangement of edge atoms have significant impact on the efficiency of spin currents in the three-terminal junctions which might be utilized in generation of graphene-based spin transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mechanism of the enhanced conductance of a molecular junction under tensile stress

Despite its fundamental importance for nano physics and chemistry and potential device applications, the relationship between atomic structure and electronic transport in molecular nanostructures is not well understood. Thus the experimentally observed increase of the conductance of some molecular nano junctions when they are stretched continues to be counterintuitive and controversial. Here we explore this phenomenon in propanedithiolate molecules bridging gold electrodes by means of {\em ab initio} computations and semi-empirical modeling. We show that in this system it is due to changes in Au-S-C bond angles and strains in the gold electrodes, rather than to the previously proposed mechanisms of Au-S bond stretching and an associated energy shift of the highest occupied molecular orbital and/or Au atomic chain formation. Our findings indicate that conductance enhancement in response to the application of tensile stress should be a generic property of molecular junctions in which the molecule is thiol-bonded in a similar way to gold electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Voltage-controlled spin injection with an endohedral fullerene CoC$_{60}$ dimer

Spin-dependent transport through an endohedral fullerene Co@C$_{60}$ dimer with gold electrodes is explored theoretically using density functional and extended Hückel theory. Density of states spin polarizations up to 95%, due to spin-splitting of Co 3d orbitals, are found by varying the gate and/or bias voltage. The current-voltage characteristics and strong (up to 100%) spin polarization of the current indicate that the device can be utilized for highly efficient spin injection into nonmagnetic conductors. This finding opens the way to the realization of electrostatically tuned spintronic nano devices less than 2 nanometers in size, without ferromagnetic electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic and optical spectra in a diluted magnetic semiconductor multilayer

The effects of random distribution of magnetic impurities with concentration $x$ in a semiconductor alloy multilayer at a paramagnetic temperature are investigated by means of coherent potential approximation and tight-binding model. The change in the electronic states and the optical absorption spectrum with $x$ is calculated for weak and strong exchange interactions between carrier spins and localized spin moments on magnetic ions. We find that the density of states and optical absorption are strongly layer-dependent due to the quantum size effects. The electronic and optical spectra are broadened due to the spin fluctuations of magnetic ions and in the case of strong exchange interaction, an energy gap appears in both spectra. Furthermore, the interior layers show higher contribution in the optical absorption of the system. The results can be helpful for magneto-optical devices at a paramagnetic temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Scanning tunneling spectroscopy and Dirac point resonances due to a single Co adatom on gated graphene

Based on the standard tight-binding model of the graphene $π$-band electronic structure, the extended Hückel model for the adsorbate and graphene carbon atoms, and spin splittings estimated from density functional theory (DFT), the Dirac point resonances due to a single cobalt atom on graphene are studied. The relaxed geometry of the magnetic adsorbate and the graphene is calculated using DFT. The system shows strong spin polarization in the vicinity of the graphene Dirac point energy for all values of the gate voltage, due to the spin-splitting of Co 3d orbitals. We also model the differential conductance spectra for this system that have been measured in the scanning tunneling microscopy (STM) experiments of Brar {\em et al.} [Nat. Phys. {\bf 7}, 43 (2011)]. We interpret the experimentally observed behavior of the S-peak in the STM differential conductance spectrum as evidence of tunneling between the STM tip and a cobalt-induced Dirac point resonant state of the graphene, via a Co 3d orbital. The cobalt ionization state which is determined by the energy position of the resonance can be tuned by gate voltage, similar to that seen in the experiment.

0 citations0 reviewsNo code linkedOpen access