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Alexander Khaetskii

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cond-mat.mes-hall cond-mat.dis-nn

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preprint2021arXiv

Revisiting the physical origin and nature of surface states in inverted-band semiconductors

We revisit the problem of surface states in semiconductors with inverted band structures, such as $α$-Sn and HgTe. We unravel the confusion that arose over the past decade regarding the origin of the surface states, their topological nature, and the role of strain. Within a single minimalistic description, we reconcile different solutions found in the 1980s with the results obtained from modern-day numerical simulations, allowing us to unambiguously identify all branches of surface states around the $Γ$-point of the Brillouin zone in different regimes. We also show that strain is a smooth "deformation" to the surface states, following the usual continuity principle of physics, and not leading to any drastic change of the physical properties in these materials, in contrast to what has recently been advanced in the literature. We consider biaxial in-plane strain that is either tensile or compressive, leading to different branches of surface states for topological insulators and Dirac semimetals, respectively. Our model can help in interpreting numerous experiments on topological surface states originating from inverted-band semiconductors.

preprint2016arXiv

Killing Auger recombination in nanostructures by carrier spin polarization

In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to strongly reduce the Auger recombination rate by injecting spin-polarized carriers. Our method is illustrated on the example of a quantum well in which the spin-orbit coupling of conduction band is negligible as compared to valence band and thus holes can be considered as spin-unpolarized. The suppression factor of the Auger recombination is determined by the two-dimensional character of the system, given by the ratio of the Fermi energy of electrons and the separation of the electron levels quantized in the growth direction. Our predictions can be tested experimentally and we discuss their implications for semiconductor lasers relying on injection of spin-polarized electrons.

preprint2014arXiv

Edge spin accumulation in 2D electron and hole systems in a quasi-ballistic regime

We consider a two-dimensional structure with spin-orbit-related splitting of the electron (hole) spectrum and calculate the edge spin density which appears due to the intrinsic mechanism of spin-orbit interaction in the presence of a charge current through the structure. We concentrate on the quasi-ballistic case when a mean free path, being much smaller than the sample size, is larger than the spin precession length determined by the value of the spin-orbit splitting. We show that regardless of the presence or absence of the bulk spin current the main source of the edge spin density is the boundary scattering itself. The character of the edge spin density depends on the smoothness of the bulk impurity potential. We have calculated the edge spin density profile for an arbitrary smoothness of the scattering potential in the bulk, and discussed relation to the existing experiments for two-dimensional holes.

preprint2012arXiv

Unitarity of scattering and edge spin accumulation

We consider a 2D ballistic and quasi-ballistic structures with spin-orbit-related splitting of the electron spectrum. The ballistic region is attached to the leads with a voltage applied between them. We calculate the edge spin density which arises in the presence of a charge current through the structure. We solve the problem with the use of the method of scattering states and clarify the important role of the unitarity of scattering. In the case of a straight boundary it leads to exact cancellation of long-wavelength oscillations of the spin density. In general, however, the smooth spin oscillations with the spin precession length may arise, as it happens, e.g., for the wiggly boundary. Moreover, we show that the result crucially depends on the form of the spin-orbit Hamiltonian.

preprint2004arXiv

Nonexistence of intrinsic spin currents

We have described the electron spin dynamics in the presence of the spin-orbit interaction and disorder using the spin-density matrix method. We showed that in the Born approximation in the scattering amplitude the spin current is zero for an arbitrary ratio of the spin-orbit splitting and the scattering rate. Various types of the disorder potential are studied. We argue that the bulk spin current has always an {\it extrinsic} nature and depends explicitely on scattering by impurities since it appears only beyond the Born approximation in the scattering amplitude.

preprint2003arXiv

Phonon-induced decay of the electron spin in quantum dots

We study spin relaxation and decoherence in a GaAs quantum dot due to spin-orbit interaction. We derive an effective Hamiltonian which couples the electron spin to phonons or any other fluctuation of the dot potential. We show that the spin decoherence time $T_2$ is as large as the spin relaxation time $T_1$, under realistic conditions. For the Dresselhaus and Rashba spin-orbit couplings, we find that, in leading order, the effective magnetic field can have only fluctuations transverse to the applied magnetic field. As a result, $T_2=2T_1$ for arbitrarily large Zeeman splittings, in contrast to the naively expected case $T_2\ll T_1$. We show that the spin decay is drastically suppressed for certain magnetic field directions and values of the Rashba coupling constant. Finally, for the spin coupling to acoustic phonons, we show that $T_2=2T_1$ for all spin-orbit mechanisms in leading order in the electron-phonon interaction.

preprint2002arXiv

Electron spin evolution induced by interaction with nuclei in a quantum dot

We study the decoherence of a single electron spin in an isolated quantum dot induced by hyperfine interaction with nuclei for times smaller than the nuclear spin relaxation time. The decay is caused by the spatial variation of the electron envelope wave function within the dot, leading to a non-uniform hyperfine coupling $A$. We show that the usual treatment of the problem based on the Markovian approximation is impossible because the correlation time for the nuclear magnetic field seen by the electron spin is itself determined by the flip-flop processes. The decay of the electron spin correlation function is not exponential but rather power (inverse logarithm) law-like. For polarized nuclei we find an exact solution and show that the precession amplitude and the decay behavior can be tuned by the magnetic field. The decay time is given by $\hbar N/A$, where $N$ is the number of nuclei inside the dot. The amplitude of precession, reached as a result of the decay, is finite. We show that there is a striking difference between the decoherence time for a single dot and the dephasing time for an ensemble of dots.