Researcher profile

Alexander J. Leide

Alexander J. Leide contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties

Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiation-induced hardening. Residual stress is evaluated using HR-EBSD, AFM swelling measurements, and a novel microcantilever relaxation technique coupled with finite element modelling. Large compressive residual stresses of several GPa are found in the irradiated material, which contribute to the significant hardening observed in nanoindentation measurements. The origin of these residual stresses and the associated hardening is the unirradiated substrate which constrains radiation swelling. Comparisons with other materials susceptible to irradiation swelling show that this effect should not be neglected in studying the effects of ion irradiation damage on mechanical properties. This constraint may also be influencing fundamental radiation defects. This has significant implications for the suitability of ion implantation as a surrogate for neutron irradiations. These results demonstrate the significance of swelling-induced residual stresses in nuclear reactor components, and the impact on structural integrity of reactor components.

preprint2020arXiv

Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation

Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acquiring Raman spectra shows rapid recovery of Si-C bonding, but not a complete recovery of the unirradiated structure. Annealing irradiated SiC causes surface oxidation where unirradiated SiC does not oxidise. Comparisons are made to the apparent radiation resistance of diamond and silicon which have similar crystal structures, but are monatomic, leading to the suggestion that chemical defects are responsible for increased radiation damage in SiC.