Researcher profile

Alex Gee

Alex Gee contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Localised Solid-State Nanopore Fabrication via Controlled Breakdown using On-Chip Electrodes

Controlled breakdown has recently emerged as a highly accessible technique to fabricate solid-state nanopores. However, in its most common form, controlled breakdown creates a single nanopore at an arbitrary location in the membrane. Here, we introduce a new strategy whereby breakdown is performed by applying the electric field between an on-chip electrode and an electrolyte solution in contact with the opposite side of the membrane. We demonstrate two advantages of this method. First, we can independently fabricate multiple nanopores at given positions in the membrane by localising the applied field to the electrode. Second, we show we can create nanopores that are self-aligned with complementary nanoelectrodes by applying voltages to the on-chip electrodes to locally heat the membrane during controlled breakdown. This new controlled breakdown method provides a path towards the affordable, rapid, and automatable fabrication of arrays of nanopores self-aligned with complementary on-chip nanostructures.

preprint2020arXiv

Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single Molecule Spin Crossover Nanogap Devices

Spin crossover (SCO) molecules are promising bi-stable magnetic switches with applications in molecular spintronics. However, little is known about the switching effects of a single SCO molecule when it is confined between two metal electrodes. Here we examine the switching properties of a [Fe(III)(EtOSalPet )(NCS)] SCO molecule that is specifically tailored for surface deposition and binding to only one gold electrode in a nanogap device. Temperature dependent conductivity measurements on SCO molecule containing electromigrated gold break junctions show voltage independent telegraphic-like switching between two resistance states at temperature below 200 K. The transition temperature is very different from the transition temperature of 83 K that occurs in a bulk film of the same material. This indicates that the bulk, co-operative SCO phenomenon is no longer preserved for a single molecule and that the surface interaction drastically increases the temperature of the SCO phenomenon. Another key finding of this work is that some devices show switching between multiple resistance levels. We propose that in this case, two SCO molecules are present within the nanogap with both participating in the electronic transport and switching.