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Alessandro Sala

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Published work

2 published item(s)

preprint2020arXiv

Molecular anchoring stabilizes low valence Ni(I)TPP on copper against thermally induced chemical changes

Many applications of molecular layers deposited on metal surfaces, ranging from single-atom catalysis to on-surface magnetochemistry and biosensing, rely on the use of thermal cycles to regenerate the pristine properties of the system. Thus, understanding the microscopic origin behind the thermal stability of organic/metal interfaces is fundamental for engineering reliable organic-based devices. Here, we study nickel porphyrin molecules on a copper surface as an archetypal system containing a metal center whose oxidation state can be controlled through the interaction with the metal substrate. We demonstrate that the strong molecule-surface interaction, followed by charge transfer at the interface, plays a fundamental role in the thermal stability of the layer by rigidly anchoring the porphyrin to the substrate. Upon thermal treatment, the molecules undergo an irreversible transition at 420 K, which is associated with an increase of the charge transfer from the substrate, mostly localized on the phenyl substituents, and a downward tilting of the latters without any chemical modification

preprint2015arXiv

Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist

We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at Γ and K of the MoS2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS2 within the heterostructure becomes predominantly an indirect bandgap system for all twist angles except in the proximity of 30 degrees. This result enables potential bandgap engineering in van der Waals heterostructures comprised of monolayer structures.