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Researcher profile

Alessandro Cresti

Alessandro Cresti contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Tutorial notes for the evaluation of thermoelectric quantum bounds in ideal nanostructures

The wave-like nature of electrons leads to the existence of upper bounds on the thermoelectric response of nanostructured devices [R. S. Whitney, Phys. Rev. Lett. 112, 130601 (2014); Phys. Rev. B 91, 115425 (2015)]. This fundamental result, not present in classical thermodynamics, was demonstrated exploiting a two-terminal device modelled by non-linear scattering theory. In the present paper, we consider non-linear quantum transport through the same type of device working both as thermal machine and as refrigerator. For both operations, starting from charge and heat current expressions, we provide analytic quantum bounds for power exchanged, thermal currents and device efficiencies. For this purpose, we adopt a transmission function that maximizes the engine efficiency for given power output. For the optimal boxcar- or theta function-transmission shapes, we provide in a tutorial way an explicit deduction of the quantum bound expressions reported in the above cited papers.

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preprint2021arXiv

Regimes and quantum bounds of nanoscale thermoelectrics with peaked transmission function

Based on the Landauer-Büttiker theory, we explore the thermal regimes of two-terminal nanoscale systems with an energy-peaked transmission function. The device is in contact with two reservoirs held at different temperatures and chemical potentials. We identify the operation regions where the system acts as energy pump (thermal machine) or heat pump (refrigerator machine), or where it is working in dissipative modes. The corresponding thermoelectric parameters are obtained without numerical calculations. The recent literature, by focusing on systems with box-like or step-like shapes of the transmission functions, demonstrated that bounds of quantum origin exist for output power and heat currents of thermal machines and refrigerators. The simple model we adopt in this paper allows us to grasp easily and without numerical calculations the presence of quantum bounds for the above thermoelectric quantities, as function of the position of the transmission peak with respect to the chemical potentials of the left and right reservoirs. In spite of the simple model and treatment, our results are in qualitative agreement with analytic findings in previous researches obtained with more realistic description of the electronic transmission function.

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preprint2020arXiv

Growth, charge and thermal transport of flowered graphene

We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains left over by dynamic recrystallisation. Next, in order to evaluate the use of such defects as possible building blocks for all-graphene electronics, we combine multiscale modeling tools to investigate the structure and the electron and phonon transport properties of large monolayer graphene samples with a random distribution of flower defects. For large enough flower densities, we find that electron transport is strongly suppressed while, surprisingly, hole transport remains almost unaffected. These results suggest possible applications of flowered graphene for electron energy filtering. For the same defect densities, phonon transport is reduced by orders of magnitude as elastic scattering by defects becomes dominant. Heat transport by flexural phonons, key in graphene, is largely suppressed even for very low concentrations.

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