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Alessandro Cresti

Alessandro Cresti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

13 published item(s)

preprint2022arXiv

Tutorial notes for the evaluation of thermoelectric quantum bounds in ideal nanostructures

The wave-like nature of electrons leads to the existence of upper bounds on the thermoelectric response of nanostructured devices [R. S. Whitney, Phys. Rev. Lett. 112, 130601 (2014); Phys. Rev. B 91, 115425 (2015)]. This fundamental result, not present in classical thermodynamics, was demonstrated exploiting a two-terminal device modelled by non-linear scattering theory. In the present paper, we consider non-linear quantum transport through the same type of device working both as thermal machine and as refrigerator. For both operations, starting from charge and heat current expressions, we provide analytic quantum bounds for power exchanged, thermal currents and device efficiencies. For this purpose, we adopt a transmission function that maximizes the engine efficiency for given power output. For the optimal boxcar- or theta function-transmission shapes, we provide in a tutorial way an explicit deduction of the quantum bound expressions reported in the above cited papers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Regimes and quantum bounds of nanoscale thermoelectrics with peaked transmission function

Based on the Landauer-Büttiker theory, we explore the thermal regimes of two-terminal nanoscale systems with an energy-peaked transmission function. The device is in contact with two reservoirs held at different temperatures and chemical potentials. We identify the operation regions where the system acts as energy pump (thermal machine) or heat pump (refrigerator machine), or where it is working in dissipative modes. The corresponding thermoelectric parameters are obtained without numerical calculations. The recent literature, by focusing on systems with box-like or step-like shapes of the transmission functions, demonstrated that bounds of quantum origin exist for output power and heat currents of thermal machines and refrigerators. The simple model we adopt in this paper allows us to grasp easily and without numerical calculations the presence of quantum bounds for the above thermoelectric quantities, as function of the position of the transmission peak with respect to the chemical potentials of the left and right reservoirs. In spite of the simple model and treatment, our results are in qualitative agreement with analytic findings in previous researches obtained with more realistic description of the electronic transmission function.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Growth, charge and thermal transport of flowered graphene

We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains left over by dynamic recrystallisation. Next, in order to evaluate the use of such defects as possible building blocks for all-graphene electronics, we combine multiscale modeling tools to investigate the structure and the electron and phonon transport properties of large monolayer graphene samples with a random distribution of flower defects. For large enough flower densities, we find that electron transport is strongly suppressed while, surprisingly, hole transport remains almost unaffected. These results suggest possible applications of flowered graphene for electron energy filtering. For the same defect densities, phonon transport is reduced by orders of magnitude as elastic scattering by defects becomes dominant. Heat transport by flexural phonons, key in graphene, is largely suppressed even for very low concentrations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Unconventional Features in the Quantum Hall Regime of Disordered Graphene: Percolating Impurity States and Hall Conductance Quantization

We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy bandgap and Landau level degeneracy breaking. By using efficient real-space transport methodologies, we compute both the dissipative and Hall conductivities of large size graphene sheets with random distribution of model single and double vacancies. By analyzing the scaling of transport coefficients with defect density, system size and magnetic length, we elucidate the origin of anomalous quantum Hall features as magnetic-field dependent impurity states, which percolate at some critical energies. These findings shed light on unidentified states and quantum transport anomalies reported experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiple Quantum Phases in Graphene with Enhanced Spin-Orbit Coupling: From the Quantum Spin Hall Regime to the Spin Hall Effect and a Robust Metallic State

We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects of adatom clustering in the formation of the topological state, but also provide evidence for the emergence of spin accumulation at opposite sample edges driven by spin-dependent scattering induced by thallium islands, which eventually results in a minimum bulk conductivity $\sim 4e^{2}/h$, insensitive to localization effects.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum Hall effect in polycrystalline graphene: The role of grain boundaries

We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted by the polycrystalline morphology, requiring the magnetic length to be smaller than the average grain radius. The nature of localization is also found to be unusual, with strongly localized states at the center of Landau levels (including the usually highly robust zero-energy state) and extended electronic states lying between Landau levels. These extended states percolate along the network of grain boundaries, resulting in a finite value for the bulk dissipative conductivity and suppression of the quantized Hall conductance. Such breakdown of the quantum Hall regime provoked by extended structural defects is also illustrated through two-terminal Landauer-Büttiker conductance calculations, indicating how a single grain boundary induces cross-linking between edge states lying at opposite sides of a ribbon geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum transport in chemically functionalized graphene at high magnetic field: Defect-Induced Critical States and Breakdown of Electron-Hole Symmetry

Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0.5% to few percents), the electron-hole symmetry of Landau levels is broken, while a double-peaked conductivity develops at low-energy, resulting from the formation of critical states conveyed by the random network of defects-induced impurity states. Scaling analysis hints towards the existence of an additional zero-energy quantized Hall conductance plateau, which is here not connected to degeneracy lifting of Landau levels by sublattice symmetry breakage. This singularly contrasts with usual interpretation, and unveils a new playground for tailoring the fundamental characteristics of the quantum Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the Non-Equilibrium Green's Functions (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased, and by tuning the density of chemical dopants the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Broken Symmetries, Zero-Energy Modes, and Quantum Transport in Disordered Graphene: From Supermetallic to Insulating Regimes

The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two sublattices or exclusively located on a single sublattice, all conduction regimes are covered from direct tunneling through evanescent modes to mesoscopic transport in bulk disordered graphene. Depending on the transport measurement geometry, defect density, and broken sublattice-symmetry, the Dirac point conductivity is either exceptionally robust against disorder (supermetallic state) or suppressed through a gap opening or by algebraic localization of zero-energy modes, whereas weak localization and the Anderson insulating regime are obtained for higher energies. These findings clarify the contribution of zero-energy modes to transport at the Dirac point, hitherto controversial.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetoresistance in Disordered Graphene: The Role of Pseudospin and Dimensionality Effects Unraveled

We report a theoretical low-field magnetotransport study unveiling the effect of pseudospin in realistic models of weakly disordered graphene-based materials. Using an efficient Kubo computational method, and simulating the effect of charges trapped in the oxide, different magnetoconductance fingerprints are numerically obtained in system sizes as large as 0.3 micronmeter squared, containing tens of millions of carbon atoms. In two-dimensional graphene, a strong valley mixing is found to irreparably yield a positive magnetoconductance (weak localization), whereas crossovers from positive to a negative magnetoconductance (weak antilocalization) are obtained by reducing disorder strength down to the ballistic limit. In sharp contrast, graphene nanoribbons with lateral size as large as 10nm show no sign of weak antilocalization, even for very small disorder strength. Our results rationalize the emergence of a complex phase diagram of magnetoconductance fingerprints, shedding some new light on the microscopical origin of pseudospin effects.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quenching of the quantum Hall effect in graphene with scrolled edges

Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arc length of the scrolls in combination with their compact transverse size results in formation of many nonchiral transport channels in the scrolls. They short-circuit the bulk current paths and inhibit the observation of the quantized two-terminal resistance. Unlike competing theoretical proposals, this mechanism of disrupting the Hall quantization in suspended graphene is not caused by ill-chosen placement of the contacts, singular elastic strains, or a small sample size.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Unveiling the Landau Levels Structure of Graphene Nanoribbons

Magnetotransport measurements are performed in ultraclean (lithographically patterned) graphene nanoribbons down to 70 nm. At high magnetic fields, a fragmentation of the electronic spectrum into a Landau levels pattern with unusual features is unveiled. The singular Landau spectrum reveals large magneto-oscillations of the Fermi energy and valley degeneracy lifting. Quantum simulations suggest some disorder threshold at the origin of mixing between opposite chiral magnetic edge states and disappearance of quantum Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons

We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).

0 citations0 reviewsNo code linkedOpen access