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Researcher profile

Afshin Houshang

Afshin Houshang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2022arXiv

Optothermal control of spin Hall nano-oscillators

We investigate the impact of localized laser heating on the auto-oscillation properties of a 170 nm wide nano-constriction spin Hall nano-oscillators (SHNO) fabricated from a NiFe/Pt bilayer on a sapphire substrate. A 532 nm continuous wave laser is focused down to a spot size of about 500 nm at a power ranging from 0 to 12 mW. Through a comparison with resistive heating, we estimate a local temperature rise of about 8 K/mW. We demonstrate reversible laser tuning of the threshold current, the frequency, and the peak power, and find that the SHNO frequency can be tuned by up to 350 MHz, which is over three times more than the current tuning alone. Increasing the temperature also results in increased signal jitter, an increased threshold current, and a reduced maximum current for auto-oscillations. Our results open up for optical control of single SHNOs in larger SHNO networks without the need for additional voltage gates.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Energy-efficient W$_{\text{100-x}}$Ta$_{\text{x}}$/CoFeB/MgO spin Hall nano-oscillators

We investigate a W-Ta alloying route to reduce the auto-oscillation current densities and the power consumption of nano-constriction based spin Hall nano oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) measurements on microbars of W$_{\text{100-x}}$Ta$_{\text{x}}$(5 nm)/CoFeB(t)/MgO stacks with t = 1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit torque efficiency and the spin Hall conductivity. We demonstrate a 34\% reduction in threshold auto-oscillation current density, which translates into a 64\% reduction in power consumption as compared to pure W-based SHNOs. Our work demonstrates the promising aspects of W-Ta alloying for the energy-efficient operation of emerging spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fabrication of voltage gated spin Hall nano-oscillators

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative tone resist. For the nanoscopic voltage gates, we utilize a two-step tilted ion beam etching approach and through-hole encapsulation using 30 nm HfO<sub>x</sub>. The optimized tilted etching process reduces sidewalls by 75% compared to no tilting. Moreover, the HfO<sub>x</sub> encapsulation avoids any sidewall shunting and improves gate breakdown. Our experimental results on W/CoFeB/MgO/SiO<sub>2</sub> SHNOs show significant frequency tunability (6 MHz/V) even for moderate perpendicular magnetic anisotropy. Circular patterns with diameter of 45 nm are achieved with an aspect ratio better than 0.85 for 80% of the population. The optimized fabrication process allows incorporating a large number of individual gates to interface to SHNO arrays for unconventional computing and densely packed spintronic neural networks.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ultrathin ferrimagnetic GdFeCo films with very low damping

Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet-like spin-orbit-torque (SOT) behavior. However to use ferrimagnets in spintronic devices their advantageous properties must be retained also in ultrathin films (t < 10 nm). In this study, ferrimagnetic Gdx(Fe87.5Co12.5)1-x thin films in the thickness range t = 2-20 nm were grown on high resistance Si(100) substrates and studied using broadband ferromagnetic resonance measurements at room temperature. By tuning their stoichiometry, a nearly compensated behavior is observed in 2 nm Gdx(Fe87.5Co12.5)1-x ultrathin films for the first time, with an effective magnetization of Meff = 0.02 T and a low effective Gilbert damping constant of α = 0.0078, comparable to the lowest values reported so far in 30 nm films. These results show great promise for the development of ultrafast and energy efficient ferrimagnetic spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Spin Hall Ising Machine

Ising Machines (IMs) are physical systems designed to find solutions to combinatorial optimization (CO) problems mapped onto the IM via the coupling strengths of its binary spins. Using the intrinsic dynamics and different annealing schemes, the IM relaxes over time to its lowest energy state, which is the solution to the CO problem. IMs have been implemented in quantum, optical, and electronic hardware. One promising approach uses interacting nonlinear oscillators whose phases have been binarized through injection locking at twice their natural frequency. Here we demonstrate such Oscillator IMs using nano-constriction spin Hall nano-oscillator (SHNO) arrays. We show how the SHNO arrays can be readily phase binarized and how the resulting microwave power corresponds to well-defined global phase states. To distinguish between degenerate states we use phase-resolved Brillouin Light Scattering (BLS) microscopy to directly observe the individual phase of each nano-constriction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Memristive control of mutual SHNO synchronization for neuromorphic computing

Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network, tuning its individual oscillators, their coupling, and providing built-in memory units for training purposes, remain substantial challenges. Here, we address all these challenges using memristive gating of W/CoFeB/MgO/AlOx based SHNOs. In its high resistance state (HRS), the memristor modulates the perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface purely by the applied electric field. In its low resistance state (LRS), and depending on the voltage polarity, the memristor adds/subtracts current to/from the SHNO drive. The operation in both the HRS and LRS affects the SHNO auto-oscillation mode and frequency, which can be tuned up to 28 MHz/V. This tuning allows us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate two individually controlled memristors to tailor both the coupling strength and the frequency of the synchronized state. Memristor gating is therefore an efficient approach to input, tune, and store the state of the SHNO array for any non-conventional computing paradigm, all in one platform.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Width dependent auto-oscillating properties of constriction based spin Hall nano-oscillators

We study the current tunable microwave signal properties of nano-constriction based spin Hall nano-oscillators (SHNOs) in oblique magnetic fields as a function of the nano-constriction width, $w=$~50--140 nm. The threshold current is found to scale linearly with $w$, defining a constant threshold current density of $J_{th}=$ 1.7 $\times$ 10$^{8}$ A/cm$^2$. While the current dependence of the microwave frequency shows the same generic non-monotonic behavior for all $w\geqslant$ 80 nm, the quality of the generated microwave signal improves strongly with $w$, showing a linear $w$ dependence for both the total power and the linewidth. As a consequence, the peak power for a 140 nm nano-constriction is about an order of magnitude higher than that of a 80 nm nano-constriction. The smallest nano-constriction, $w=$ 50 nm, exhibits a different behavior with a higher power and a worse linewidth indicating a crossover into a qualitatively different narrow-constriction regime.

0 citations0 reviewsNo code linkedOpen access