Researcher profile

Adrien Poissier

Adrien Poissier contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Local order of liquid water at the electrochemical interface

We study the structure and dynamics of liquid water in contact with Pd and Au (111) surfaces using \emph{ab initio} molecular dynamics simulations with and without van der Waals interactions. Our results show that the structure of water at the interface of these two metals is very different. For Pd, we observe the formation of two different domains of preferred orientations, with opposite net interfacial dipoles. One of these two domains has a large degree of in-plane hexagonal order. For Au a single domain exists with no in-plane order. For both metals, the structure of liquid water at the interface is strongly dependent on the use of dispersion forces. The origin of the structural domains observed in Pd is associated to the interplay between water/water and water/metal interactions. This effect is strongly dependent on the charge transfer that occurs at the interface, and which is not modeled by current state of the art semi-empirical force fields.

preprint2010arXiv

Theoretical Study of Magnetic Moments Induced by Defects at the SiC (110) Surface

The effect of different surface defects on the atomic and electronic structures of cubic $β$-SiC(110) surface are studied by means of a first principles calculation based on Density Functional Theory using the SIESTA code. In the calculations, the possibility of different spin population at each atom is allowed. We find that while adsorption of oxygen or nitrogen and adsorption of hydrogen at the C surface carbon atoms do not induce magnetic moments on SiC(110); Si vacancies, substitutional C at the Si site and H or F adsorbed at the silicon surface sites induce localized magnetic moments as large as 0.7 $μ_{B}$ at the carbon atoms close to the defect. The local magnetic moment arrange ment varies from ferromagnetic in the case of H adsorption to antiferromagnetic in the Si vacancy and substitutional C cases. The case of H adsorption at the Si surface atoms is discussed in detail. It is concluded that magnetism is mainly due to the local character of the C valence orbitals.