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Researcher profile

Adam P. Micolich

Adam P. Micolich contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.softcond-mat.supr-con

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Published work

4 published item(s)

preprint2014arXiv

Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the sub-threshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 to 4 Kelvin, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Fabrication of undoped AlGaAs/GaAs electron quantum dots

We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb 'diamonds' free of any significant charge fluctuation noise. We also observe excited state transport in our device.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Competition between Superconductivity and Weak Localization in Metal-Mixed Ion-Implanted Polymers

We study the effects of varying the pre-implant film thickness and implant temperature on the electrical and superconducting properties of metal-mixed ion-implanted polymers. We show that it is possible to drive a superconductor-insulator transition in these materials via control of the fabrication parameters. We observe peaks in the magnetoresistance and demonstrate that these are caused by the interplay between superconductivity and weak localization in these films, which occurs due to their granular structure. We compare these magnetoresistance peaks with those seen in unimplanted films and other organic superconductors, and show that they are distinctly different.

0 citations0 reviewsNo code linkedOpen access