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Researcher profile

Adam Barcz

Adam Barcz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Diffusion of Be in gallium nitride: Experiment and modelling

Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion. The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evidence of hydrogen diffusion in n-type GaN

The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/high frequency electronics. Therefore, it is desirable to continue the research on its diffusion and segregation in semiconductor materials. In this work, we report on a first observation on hydrogen outdiffusion from bulk crystalline gallium nitride. The extent of the hydrogen diffusion is established by secondary ion mass spectrometry. Analysis of characteristic hydrogen profile in GaN grown using ammonothermal method, led to the determination of the hydrogen diffusion coefficient at the temperature of 1045C - a standard growth temperature for HVPE (halide vapor phase epitaxy) method.

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