Researcher profile

A. Zarubin

A. Zarubin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Response of a CMS HGCAL silicon-pad electromagnetic calorimeter prototype to 20-300 GeV positrons

The Compact Muon Solenoid Collaboration is designing a new high-granularity endcap calorimeter, HGCAL, to be installed later this decade. As part of this development work, a prototype system was built, with an electromagnetic section consisting of 14 double-sided structures, providing 28 sampling layers. Each sampling layer has an hexagonal module, where a multipad large-area silicon sensor is glued between an electronics circuit board and a metal baseplate. The sensor pads of approximately 1 cm$^2$ are wire-bonded to the circuit board and are readout by custom integrated circuits. The prototype was extensively tested with beams at CERN's Super Proton Synchrotron in 2018. Based on the data collected with beams of positrons, with energies ranging from 20 to 300 GeV, measurements of the energy resolution and linearity, the position and angular resolutions, and the shower shapes are presented and compared to a detailed Geant4 simulation.

preprint2020arXiv

Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.

preprint2020arXiv

Space charge formation in chromium compensated GaAs radiation detectors

Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime τ = 150 ns and electron drift mobility μd = 3650 cm2/Vs. We developed and successfully applied theoretical model based on fast hole trapping in the system with spatially variable hole conductivity.