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Source author record

A. W. Ghosh

A. W. Ghosh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.stat-mech

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Published work

4 published item(s)

preprint2008arXiv

Role of Many-particle excitations in Coulomb Blockaded Transport

We discuss the role of electron-electron and electron-phonon correlations in current flow in the Coulomb Blockade regime, focusing specifically on nontrivial signatures arising from the break-down of mean-field theory. By solving transport equations directly in Fock space, we show that electron-electron interactions manifest as gateable excitations experimentally observed in the current-voltage characteristic. While these excitations might merge into an incoherent sum that allows occasional simplifications, a clear separation of excitations into slow `traps' and fast `channels' can lead to further novelties such as negative differential resistance, hysteresis and random telegraph signals. Analogous novelties for electron-phonon correlation include the breakdown of commonly anticipated Stokes-antiStokes intensities, and an anomalous decrease in phonon population upon heating due to reabsorption of emitted phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Breaking of general rotational symmetries by multi-dimensional classical ratchets

We demonstrate that a particle driven by a set of spatially uncorrelated, independent colored noise forces in a bounded, multidimensional potential exhibits rotations that are independent of the initial conditions. We calculate the particle currents in terms of the noise statistics and the potential asymmetries by deriving an n-dimensional Fokker-Planck equation in the small correlation time limit. We analyze a variety of flow patterns for various potential structures, generating various combinations of laminar and rotational flows.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Molecular conduction: paradigms and possibilities

We discuss the factors that determine the overall shape and magnitude of the current-voltage (I-V) characteristics of a variety of molecular conductors sandwiched between two metallic contacts. We analyze the individual influences of the contact geometry, the molecular chemistry, the electrostatics of the environment, and charging on molecular conduction. Current conduction depends sensitively on the experimental geometry, as well as on the theoretical model for the molecule and the contacts. Computing molecular I-V characteristics will thus require theoretical understanding on several fronts, in particular, (a) in the scheme for calculating the molecular energy levels, as well as (b) on the position of the contact Fermi energy relative to those levels.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Silicon-based molecular electronics

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk silicon bandstructure with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative differential resistance (NDR) when the molecular levels are driven by an STM potential into the semiconducting band-gap. The peaks appear for positive bias on a p-doped and negative for an n-doped substrate. Charging in these devices is compromised by the RTD action, allowing possible identification of several molecular highest occupied (HOMO) and lowest unoccupied (LUMO) levels. Recent experiments by Hersam et al. [1] support our theoretical predictions.

0 citations0 reviewsNo code linkedOpen access