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Researcher profile

A. Verga

A. Verga contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mech

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Published work

3 published item(s)

preprint2012arXiv

Enhanced spin Hall effect in strong magnetic disorder

We consider a two-dimensional electron gas in an inversion asymmetric layer and in the presence of spatially distributed magnetic impurities. We investigate the relationship between the geometrical properties of the wave-function and the system's spin dependent transport properties. A localization transition, arising when disorder is increased, is exhibited by the appearance of a fractal state with finite inverse participation ratio. Below the transition, interference effects modify the carrier's diffusion, as revealed by the dependence on the scattering time of the power law exponents characterizing the spreading of a wave packet. Above the transition, in the strong disorder regime, we find that the states are spin polarized and localized around the impurities. A significant enhancement of the spin current develops in this regime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Vicinal surface growth: bunching and meandering instabilities

The morphology of a growing crystal surface is studied in the case of an unstable two-dimensional step flow. Competition between bunching and meandering of steps leads to a variety of patterns characterized by their respective instability growth rates. The roughness exponent is shown to go from 1/2 to 1, between the pure bunching to the meandering regimes. Using numerical simulations, we observe that generically, a transition between the two regimes occurs. We find surface shapes and roughness time evolution in quantitative agreement with experiments.

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preprint2011arXiv

Dynamical spin Hall conductivity in a magnetic disordered system

We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers' spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions, we analytically compute the spin Hall conductivity. It is demonstrated that using the appropriate order of limits, one recovers the intrinsic universal value. Numerical computations on a tight-binding model, in the weak disorder regime, confirm that the spin Hall effect is preserved in the presence of magnetic impurities. The optical spin conductivity shows large sample to sample fluctuations in the low frequency region. As a consequence, for weak disorder, the static spin conductivity is found to follow a wide Gaussian distribution with its mean value near the intrinsic clean value.

0 citations0 reviewsNo code linkedOpen access