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A. V. Postnikov

A. V. Postnikov contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2020arXiv

A way to measure the dispersion forces near the van der Waals-Casimir transition

Forces induced by quantum fluctuations of electromagnetic field control adhesion phenomena between rough solids when the bodies are separated by distances ~10nm. However, this distance range remains largely unexplored experimentally in contrast with the shorter (van der Waals forces) or the longer (Casimir forces) separations. The reason for this is the pull-in instability of the systems with the elastic suspension that poses a formidable limitation. In this paper we propose a genuine experimental configuration that does not suffer from the short distance instability. The method is based on adhered cantilever, whose shape is sensitive to the forces acting near the adhered end. The general principle of the method, its possible realization and feasibility are extensively discussed. The dimensions of the cantilever are determined by the maximum sensitivity to the forces. If the adhesion is defined by strong capillary or chemical interactions, the method loses its sensitivity. Special discussion is presented for the determination of the minimum distance between the rough solids upon contact, and for the compensation of the residual electrostatic contribution. The proposed method can be applied to any kind of solids (metals, semiconductors, dielectrics) and to any intervening medium (gas or liquid).

preprint2019arXiv

Prospects for terahertz imaging the human skin cancer with the help of gold-nanoparticles-based terahertz-to-infrared converter

The design is suggested, and possible operation parameters are discussed, of an instrument to inspect a skin cancer tumour in the terahertz (THz) range, transferring the image into the infrared (IR) and making it visible with the help of standard IR camera. The central element of the device is the THz-to-IR converter, a Teflon or silicon film matrix with embedded 8.5 nm diameter gold nanoparticles. The use of external THz source for irradiating the biological tissue sample is presumed. The converter's temporal characteristics enable its performance in a real-time scale. The details of design suited for the operation in transmission mode (in vitro) or on the human skin in reflection mode {in vivo) are specified.

preprint2016arXiv

Pressure-induced phonon freezing in the ZnSeS II-VI mixed crystal: phonon-polaritons and ab initio calculations

Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the phonon-polariton transverse optical modes (with mixed electrical and mechanical character) of the II-VI ZnSeS mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly resolved percolation-type Zn-S Raman doublet of the three oscillator [1(Zn-Se),2(Zn-S)] ZnSe68S32 mixed crystal, which exhibits a phase transition at approximately the same pressure as its two end compounds (~14 GPa, zincblende-to-rocksalt), as determined by high-pressure x-ray diffraction. We find that the intensity of the lower Zn-S sub-mode of ZnSe68S32, due to Zn-S bonds vibrating in their own (S-like) environment, decreases under pressure (Raman scattering), whereas its frequency progressively converges onto that of the upper Zn- S sub-mode, due to Zn-S vibrations in the foreign (Se-like) environment (ab initio calculations). Ultimately, only the latter sub-mode survives. A similar phonon freezing was earlier evidenced with the well-resolved percolation-type Be-Se doublet of ZnBeSe [Pradhan et al. Phys. Rev. B 81, 115207 (2010)], that exhibits a large contrast in the pressure-induced structural transitions of its end compounds. We deduce that the above collapse and convergence process is intrinsic to the percolation doublet of a short bond under pressure, at least in a ZnSe-based mixed crystal, and not due to any pressure-induced structural transition.

preprint2015arXiv

Transmission through correlated Cu$_n$CoCu$_n$ heterostructures

The effects of local electronic interactions and finite temperatures upon the transmission across the Cu$_4$CoCu$_4$ metallic heterostructure are studied in a combined density functional and dynamical mean field theory. It is shown that, as the electronic correlations are taken into account via a local but dynamic self-energy, the total transmission at the Fermi level gets reduced (predominantly in the minority spin channel), whereby the spin polarization of the transmission increases. The latter is due to a more significant $d$-electrons contribution, as compared to the non-correlated case in which the transport is dominated by $s$ and $p$ electrons.

preprint2012arXiv

Secondary phase Cu2SnSe3 vs. kesterite Cu2ZnSnSe4: similarities and differences in lattice vibration modes

The crystal structure of monoclinic semiconductor Cu2SnSe3 is optimized, in a first-principles LDA calculation by Siesta method, to be found in good agreement with available experimental data, on which base zone-center transversal phonon modes are further calculated. The comparison with a similar calculation for kesterite-phase Cu2ZnSnSe4 helps to identify vibration modes promising to serve as fingerprints for discrimination of these two materials from their lattice-dynamical properties. Moreover, a full analysis of vibration modes is done, which emphasizes an importance of structural motives present in Cu2SnSe3 but absent in kesterite, namely continuous planar chains and stripes of like cations/anions, for the manifestation of structure-specific vibration lines.

preprint2011arXiv

Re-examination of the SiGe Raman spectra - Linear chain approximation and ab initio calculations

We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of the phenomenological Percolation scheme, originally developed for zincblende alloys, after ab initio calibration of the intrinsic Si-Si, Ge-Ge and Si-Ge Raman efficiencies. The 1D-cluster scheme introduces a seven-oscillator [1x(Ge-Ge), 4x(Si-Ge), 2x(Si-Si)] Raman behavior for SiGe, which considerably deviates from the currently admitted six-oscillator [1x(Ge-Ge), 1x(Si-Ge), 4x(Si-Si)] one. The 1D-cluster re-assignment of Raman lines is based on remarkable intensity-interplays with composition, known from the literature, but so far not properly understood. It is independently supported by ab initio calculation of the frequencies of bond-stretching modes along prototype impurity motifs taken as quasi-linear. Different numbers of Raman modes per bond indicate different sensitivities to the local environment of the Ge-Ge (insensitive), Si-Si (sensitive to 1st neighbors) and Si-Ge (sensitive to 2nd neighbors) bond-stretchings. Last, we compare the SiGe Percolation scheme with the current version for zincblende alloys, using GaAsP as a natural reference. The SiGe vs. GaAsP comparison is supported by ab initio calculation of local lattice relaxation/dynamics related to prototype impurity motifs that are directly transposable to the two crystal structures.