Researcher profile

A. V. Korolev

A. V. Korolev contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con physics.chem-ph

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preprint2014arXiv

Atomic, electronic and magnetic structure of graphene/iron and nickel interfaces: theory and experiment

First-principles calculations of the effect of carbon coverage on the atomic, electronic and magnetic structure of nickel and iron substrates demonstrate insignificant changes in the interatomic distances and magnetic moments on the atoms of the metallic substrates. The coverage of the iron surface by mono- and few-layer graphene induces significant changes in the orbital occupancies and exchange interactions between the layers in contrast to the case of a nickel substrate for which changes in the orbital ordering and exchange interactions are much smaller. Experimental measurements demonstrate the presence of ferromagnetic fcc-iron in Fe@C nanoparticles and the superparamagnetic behavior of Ni@C nanoparticles.

preprint2014arXiv

Electronic structure and magnetic properties of graphene/Co composites

The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magnetic measurements which show the presence of the main (from the metal) and shifted (from the oxide) hysteresis loops. The presence of oxide layer on the metal surface prevents the metal from the full oxidation and (as shown by magnetic measurements) provides the preservation of ferromagnetic properties after long exposure in ambient air which enables the use of graphene/metal composites in spintronics devices.

preprint2011arXiv

Doping effect on the anomalous behavior of the Hall effect in electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$

Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with $R_H$$^n$(x) analysis an anomalous sign reversal of Hall effect in mixed state at $B<B_{c2}$ may be ascribed to a flux-flow regime for two types of carriers with opposite charges.