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A. Tulapurkar

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Planar Hall and Nernst effect in patterned ultrathin film of La0.7Sr0.3MnO3

We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO ultrathin film with in-plane current of 100 microA is also investigated. Even for temperature difference of 5 K the Planar Nernst Effect in ultrathin film (8 nm) shows a coercivity of 3 Oe same as observed in Planar Hall Effect measurement and confirms the ferromagnetic nature of thin film. The angular dependence of transverse voltages shows four-fold sin{theta} cos{theta} dependence symmetry at 250 K, which is consistent with Planar Hall Effect measurement.

preprint2015arXiv

Electric Field Controlled Magnetization and Charge-Ordering in Pr0.6Ca0.4MnO3

In this paper, we present the observation of the electric field control on the charge-ordering and metamagnetic transitions during the magnetization measurements in a single crystal of Pr0.6Ca0.4MnO3 (PCMO). We have demonstrated that the complete melting of charge ordering can be realized in a single crystal of PCMO by applying a voltage as small as 2.5 V, which otherwise needs magnetic fields in excess of 11 T. The maximum change in magnetization with applied voltage occurs across the charge-ordering transition temperature (TCO = 235 K). Even though the electric field does not seem to affect the magnetic ordering, we see a clear evidence at low temperatures for the occurrence of the metamagnetic transitions at higher fields with the application of electric field.

preprint2015arXiv

Electric field controlled magnetization and transport properties of La0.7Ca0.3MnO3 ultrathin film

We have investigated the effect of electric field control on the magnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathin film (~10 nm) by using it as the semiconductor channel material of a prototypical field effect device and SiO2 as dielectric gate. A large electroresistance (ER) of ~78% at Vg = -8 V is found in LCMO at 200 K. The direct magnetization measurements confirm the formation of a large ferromagnetic phase with the increase in the applied gate voltage at 200 K.

preprint2014arXiv

Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films

We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curie temperature (TC) which decrease as the film thickness increases. The sign reversal of AMR (with a maximum value of - 6) with magnetic field or temperature for the 4 nm thin film may be attributed to the increase in tensile strain in the plane of the thin film which in turn facilitates the rotation of the magnetization easy axis.