Researcher profile

A. T. N'Diaye

A. T. N'Diaye contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Unconventional magnetisation texture in graphene / cobalt hybrids

Magnetic domain structure and spin-dependent reflectivity measurements on cobalt thin films intercalated at the graphene / Ir(111) interface are investigated using spin-polarised low-energy electron microscopy. We find that graphene-covered cobalt films have surprising magnetic properties. Vectorial imaging of magnetic domains reveals an unusually gradual thickness-dependent spin reorientation transition, in which magnetisation rotates from out-of-the-film plane to the in-plane direction by less than 10$^\circ$ per cobalt monolayer. During this transition, cobalt films have a meandering spin texture, characterised by a complex, three-dimensional, wavy magnetisation pattern. In addition, spectroscopy measurements indicate that the electronic band structure of the unoccupied states is essentially spin-independent already a few electron-Volts above the vacuum level. These properties strikingly differ from those of pristine cobalt films and could open new prospects in surface magnetism.

preprint2014arXiv

Perpendicular magnetic anisotropy of cobalt films intercalated under graphene

Magnetic properties of nanometer thick Co films intercalated at the graphene/Ir(111) interface are investigated using spin-polarized low-energy electron microscopy (SPLEEM) and Auger electron spectroscopy. We show that the graphene top layer promotes perpendicular magnetic anisotropy in the Co film underneath, even for relatively thick intercalated deposits. The magnetic anisotropy energy is significantly larger for the graphene/Co interface than for the free Co surface. Hybridization of the graphene and Co electron orbitals is believed to be at the origin of the observed perpendicular magnetic anisotropy.

preprint2011arXiv

Graphene on Ir(111) characterized by angle-resolved photoemission

Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moiré superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.

preprint2009arXiv

Selecting a single orientation for millimeter sized graphene sheets

We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants grow. Cyclic growth exploiting the faster growth and etch rates of the rotational variants, yields films that are 99 % composed of aligned domains. Precovering the substrate with a high density of graphene nuclei prior to CVD yields pure films of aligned domains extending over millimeters. Such films can be used to prepare cluster-graphene hybrid materials for catalysis or nanomagnetism and can potentially be combined with lift-off techniques to yield high-quality, graphene based electronic devices.