Researcher profile

A. Sipahigil

A. Sipahigil contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers

We report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing and ISC mechanisms. We find that our model is in excellent agreement with experiment and that it can be used to predict unknown elements of the NV center's electronic structure. We discuss the model's implications for enhancing the NV center's performance as a room-temperature sensor.

preprint2015arXiv

State-selective intersystem crossing in nitrogen-vacancy centers

The intersystem crossing (ISC) is an important process in many solid-state atomlike impurities. For example, it allows the electronic spin state of the nitrogen-vacancy (NV) center in diamond to be initialized and read out using optical fields at ambient temperatures. This capability has enabled a wide array of applications in metrology and quantum information science. Here, we develop a microscopic model of the state-selective ISC from the optical excited state manifold of the NV center. By correlating the electron-phonon interactions that mediate the ISC with those that induce population dynamics within the NV center's excited state manifold and those that produce the phonon sidebands of its optical transitions, we quantitatively demonstrate that our model is consistent with recent ISC measurements. Furthermore, our model constrains the unknown energy spacings between the center's spin-singlet and spin-triplet levels. Finally, we discuss prospects to engineer the ISC in order to improve the spin initialization and readout fidelities of NV centers.