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A. S. Martins

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Published work

5 published item(s)

preprint2016arXiv

Anisotropic electronic structure and transport properties of the $\mathcal{H}$-$0$ hyperhoneycomb lattice

Carbon, being one of the most versatile elements of the periodic table, forms solids and molecules with often unusual properties. Recently, a novel family of three-dimensional graphitic carbon structures, the so-called hyperhoneycomb lattices, has been proposed, with the possibility of being topological insulators [K. Mullen, B. Uchoa and D. T. Glatzhofer, Phys. Rev. Lett. 115, 026403 (2015)]. In this work, we present electronic structure calculations for one member ($\mathcal{H}$-0) of this family, using Density Functional Theory and non-equilibrium Green's functions transport calculations to show that the $\mathcal{H}$-0 structure should have strongly anisotropic electronic properties, being an insulator or a conductor depending on the crystalline orientation chosen for transport. Calculations in the framework of Extended Hückel Theory indicate that these properties can only be understood if one considers at least $2^{nd}$ nearest-neighbor interactions between carbon atoms, invalidating some of the conclusions of Ref. [K. Mullen, B. Uchoa and D. T. Glatzhofer, Phys. Rev. Lett. 115, 026403 (2015)], at least for this particular material.

preprint2016arXiv

Comment on article "Line of Dirac Nodes in Hyperhoneycomb Lattices"

Recently, carbon hyperhoneycomb ($\mathcal{H}$-n) lattices have been proposed to be, through a one-$p$ orbital tight-binding (TB) model with nearest-neighbor (n.n.) hopping, a family of strong 3D topological insulators (K. Mullen, B. Uchoa and D. T. Glatzhofer, Phys. Rev. Lett. 115, 026403 (2015)) . In this Comment we show, through Density Functional Theory (DFT) and Extended Hückel Theory (EHT) calculations for the $\mathcal{H}$-0 lattice, that the TB Hamiltonian used by the authors is inadequate, invalidating the presented conclusions.

preprint2016arXiv

Orthogonal and Non-Orthogonal Tight Binding parameters for III-V Semiconductors Nitrides

A simulated annealing (SA) approach is employed in the determination of different tight binding (TB) sets of parameters for the nitride semiconductors AlN, GaN and InN, as well their limitations and potentialities are also discussed. Two kinds of atomic basis set are considered: (\textit{i}) the orthogonal $sp^3s*$ with interaction up to second neighbors and (\textit{ii}) a $spd$ non-orthogonal set, with the Hamiltonian matrix elements calculated within the Extended Hückel Theory (EHT) prescriptions. For the non-orthogonal method, TB parameters are given for both zincblend and wurtzite crystalline structures.

preprint2014arXiv

An Extended Hückel Study of the Electronic Properties of III-V Compounds and Their Alloys

In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT), where the Hückel parameters for the binary compounds were generated following a simulated annealing procedure. In particular, this article is focused on the dependency between band gap and the applied pressure and also the alloy composition.

preprint2014arXiv

Energy of Ni/Ni$_{3}$Al Interface: a Temperature-Dependent Theoretical Study

Using plane wave {\textit{ab-initio}} and Monte Carlo techniques, the Ni/Ni$_{3}$Al interfacial energy is studied and the results from the different techniques are critically compared. Two issues deserved special attention: the dependency of the interface energy with the supercell size, for the {\textit{ab-initio}} calculations, and the temperature dependence of the interface energy. The calculations show that from 0K up to 1000 K that energy decreases by 1 mJ/m$^2$.