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A. Pertsova

A. Pertsova appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2015arXiv

Thin films of a three-dimensional topological insulator in a strong magnetic field: a microscopic study

The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated by performing magnetic bandstructure calculations for a realistic multi-band tight-binding model. Several crucial features of Landau quantization in a realistic three-dimensional topological insulator are revealed. The $n=0$ Landau level is absent in ultra-thin films, in agreement with experiment. In films with a crossover thickness of five quintuple layers, there is a signature of the $n=0$ level, whose overall trend as a function of magnetic field matches the established low-energy effective-model result. Importantly, we find a field-dependent splitting and a strong spin-polarization of the $n=0$ level which can be measured experimentally at reasonable field strengths. Our calculations show mixing between the surface and bulk Landau levels which causes the character of levels to evolve with magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface

Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the $[\rm Mn^{2+}]^0$ plus acceptor-hole (h) complex, the results of a tight-binding model including explicitly the impurity $d$-electrons are in good agreement with approaches that treat the spin of the impurity as an effective classical vector. For the case of Fe, where both the neutral isoelectronic $[\rm Fe^{3+}]^0$ and the ionized $[\rm Fe^{2+}]^-$ states are relevant to address scanning tunneling microscopy (STM) experiments, the inclusion of $d$-orbitals is essential. We find that the in-gap electronic structure of Fe impurities is significantly modified by surface effects. For the neutral acceptor state $[{\rm Fe}^{2+}, h]^0$, the magnetic-anisotropy dependence on the impurity sublayer resembles the case of $[{\rm Mn}^{2+}, h]^0$. In contrast, for $[{\rm Fe}^{3+}]^{0}$ electronic configuration the magnetic anisotropy behaves differently and it is considerably smaller. For this state we predict that it is possible to manipulate the Fe moment, e.g. by an external magnetic field, with detectable consequences in the local density of states probed by STM.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interplay between Mn-acceptor state and Dirac surface states in Mn-doped Bi$_2$Se$_3$ topological insulator

We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion-symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with experiments, we find evidence that the Mn ion is in the ${+2}$-valence state and introduces an acceptor in the bulk band gap. The Mn-acceptor has predominantly $p$-character, and is localized mainly around the Mn impurity and its nearest-neighbor Se atoms. Its electronic structure and spin-polarization are determined by the hybridization between the Mn $d$-levels and the $p$-levels of surrounding Se atoms, which is strongly affected by electronic correlations at the Mn site. The opening of the gap at the Dirac point depends crucially on the quasi-resonant coupling and the strong real-space overlap between the spin-chiral surface states and the mid-gap spin-polarized Mn-acceptor states.

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preprint2014arXiv

Spin dynamics of Mn impurities and their bound acceptors in GaAs

We present results of tight-binding spin-dynamics simulations of individual and pairs of substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical scheme for spin dynamics, with coupled equations of motions for the quantum subsystem, representing the host, and the localized spins of magnetic dopants, which are treated classically. In the case of a single Mn impurity, we calculate explicitly the time evolution of the Mn spin and the spins of nearest-neighbors As atoms, where the acceptor (hole) state introduced by the Mn dopant resides. We relate the characteristic frequencies in the dynamical spectra to the two dominant energy scales of the system, namely the spin-orbit interaction strength and the value of the p-d exchange coupling between the impurity spin and the host carriers. For a pair of Mn impurities, we find signatures of the indirect (carrier-mediated) exchange interaction in the time evolution of the impurity spins. Finally, we examine temporal correlations between the two Mn spins and their dependence on the exchange coupling and spin-orbit interaction strength, as well as on the initial spin-configuration and separation between the impurities. Our results provide insight into the dynamic interaction between localized magnetic impurities in a nano-scaled magnetic-semiconductor sample, in the extremely dilute (solotronics) regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing the wavefunction of the surface states in Bi$_2$Se$_3$ topological insulator: a realistic tight-binding approach

We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of spin-orbit interaction on the electronic structure of the bulk and of a slab with finite thickness is investigated. In particular, a phenomenological criterion of band inversion is formulated for both bulk and slab, based on the calculated atomic- and orbital-projections of the wavefunctions, associated with valence and conduction band extrema at the center of the Brillouin zone. We carry out a thorough analysis of the calculated bandstructures of slabs with varying thickness, where surface states are identified using a quantitative criterion according to their spatial distribution. The thickness-dependent energy gap, attributed to inter-surface interaction, and the emergence of gapless surface states for slabs above a critical thickness are investigated. We map out the transition to the infinite-thickness limit by calculating explicitly the modifications in the spatial distribution and spin-character of the surface states wavefunction with increasing the slab thickness. Our numerical analysis shows that the system must be approximately forty quintuple-layers thick to exhibit completely decoupled surface states, localized on the opposite surfaces. These results have implications on the effect of external perturbations on the surface states near the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Time-dependent electron transport through a strongly correlated quantum dot: multiple-probe open boundary conditions approach

We present a time-dependent study of electron transport through a strongly correlated quantum dot. The time-dependent current is obtained with the multiple-probe battery method, while adiabatic lattice density functional theory in the Bethe ansatz local-density approximation to the Hubbard model describes the dot electronic structure. We show that for a certain range of voltages the quantum dot can be driven into a dynamical state characterized by regular current oscillations. This is a manifestation of a recently proposed dynamical picture of Coulomb blockade. Furthermore, we investigate how the various approximations to the electron-electron interaction affect the line-shapes of the Coulomb peaks and the I-V characteristics. We show that the presence of the derivative discontinuity in the approximate exchange-correlation potential leads to significantly different results compared to those obtained at the simpler Hartree level of description. In particular, a negative differential conductance (NDC) in the I-V characteristics is observed at large bias voltages and large Coulomb interaction strengths. We demonstrate that such NDC originates from the combined effect of electron-electron interaction in the dot and the finite bandwidth of the electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Quasi-Two-Dimensional Extraordinary Hall Effect

Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating the conductivity tensor, we compare the quasi- two-dimensional Hall resistance with the resistance of a massive sample. In this study a new mechanism of EHE (geometric mechanism of EHE) due to non-ideal interfaces and volume defects is also proposed.

0 citations0 reviewsNo code linkedOpen access