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Researcher profile

A. Nath

A. Nath contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scihep-exhep-phnucl-ex

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Published work

4 published item(s)

preprint2022arXiv

Magnetic Field Measurement and Analysis for the Muon g-2 Experiment at Fermilab

The Fermi National Accelerator Laboratory has measured the anomalous precession frequency $a^{}_μ= (g^{}_μ-2)/2$ of the muon to a combined precision of 0.46 parts per million with data collected during its first physics run in 2018. This paper documents the measurement of the magnetic field in the muon storage ring. The magnetic field is monitored by nuclear magnetic resonance systems and calibrated in terms of the equivalent proton spin precession frequency in a spherical water sample at 34.7$^\circ$C. The measured field is weighted by the muon distribution resulting in $\tildeω'^{}_p$, the denominator in the ratio $ω^{}_a$/$\tildeω'^{}_p$ that together with known fundamental constants yields $a^{}_μ$. The reported uncertainty on $\tildeω'^{}_p$ for the Run-1 data set is 114 ppb consisting of uncertainty contributions from frequency extraction, calibration, mapping, tracking, and averaging of 56 ppb, and contributions from fast transient fields of 99 ppb.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

$K \rightarrow π\ell^+ \ell^-$ form factor in the Large-N$_c$ and cut-off regularization method

Bardeen-Buras-Gérard have proposed a large N$_c$ method to evaluate hadronic weak matrix elements to attack for instance the determination of the $ΔI= \frac{1}{2}$-rule and $\mathrm{Re}(\frac{ε'}ε)$. Here we test this method to the determination of the form factor parameters $a_+$ and $b_+$ in the decays $K^+ \rightarrow π^+ \ell^+ \ell^- $ and $K_S \rightarrow π^0 \ell^+ \ell^-$. The results are encouraging: in particular after a complete treatment of Vector Meson Dominance (VMD).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Functionalized graphene as a model system for the two-dimensional metal-insulator transition

Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we demonstrate the existence of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.

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