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A. Mougin

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Perpendicular magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers via the Spin Hall Effect of Pt

We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs through nucleation and propagation of a domain of opposite polarity for a current density of the order of 0.3 TA/m$^2$. In these experiments we demonstrate a full control of each stage: i)the Ørsted field controls the domain nucleation and ii) domain-wall propagation occurs by spin torque from the Pt spin Hall effect. This scenario requires an in-plane magnetic field to tune the domain wall center orientation along the current for efficient domain wall propagation. Indeed, as nucleated, domain walls are chiral and Néel like due to the interfacial Dzyaloshinskii-Moriya interaction.

preprint2013arXiv

Spatially periodic domain wall pinning potentials: Asymmetric pinning and dipolar biasing

Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from the continuous magnetic layer. The effect of the periodic pinning potentials on thermally activated domain wall creep dynamics is shown to be equivalent, at first approximation, to that of a uniform, effective retardation field, $H_{ret}$, which acts against the applied field, $H$. We show that $H_{ret}$ depends not only on the array geometry but also on the relative orientation of $H$ and the magnetization of the nanoplatelets. A result of the latter dependence is that wall-mediated hysteresis loops obtained for a set nanoplatelet magnetization exhibit many properties that are normally associated with ferromagnet/antiferromagnet exchange bias systems. These include a switchable bias, coercivity enhancement and domain wall roughness that is dependent on the applied field polarity.