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A. Mohammed

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cond-mat.mtrl-sci eess.SP

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preprint2022arXiv

An Effective Technique for Increasing Capacity and Improving Bandwidth in 5G NB-IoT

With hundreds of billions of the IoT connected devices, it is important for researchers to create effective resource management approach to satisfy the quality of service (QoS) requirements of 5th generation (5G) and beyond. Furthermore, wireless spectrum is increasingly scarce as demand for wireless services develops, demanding imaginative approaches to increase capacity within a limited spectral resource in order to meet service demands. In this article, the modified symbol time compression (M-STC) technique is suggested to paves the way for 5G networks and beyond to enhance the capacity and throughput. The M-STC method is a compressed signal waveform technique that increases the capacity by compressing the occupied bandwidth without increasing the complexity, losing data throughput or bit error rate (BER) performance. A comparative analysis is provided between the traditional orthogonal frequency division multiplexing (OFDM) system, OFDM using conventional symbol time compression (C-STC-OFDM) and OFDM using the proposed technique (M-STC-OFDM). The simulation results using Matlab-2021a show that the suggested method, M-STC-OFDM, drastically lowers the time needed for each OFDM signal by 75%. As a consequence, the M-STC-OFDM system decreases bandwidth (BW) by 75% when compared to a standard OFDM system (BW_OFDM = 180 kHz and BW_M-STC-OFDM = 45 kHz), while the C-STC-OFDM system reduces BW by 50% (BW_C-STC-OFDM = 90 kHz). Furthermore, using the M-STC-OFDM system reduces peak to average-power-ratio (PAPR) by 2.09 dB when compared to the standard OFDM system and 1.18 dB when compared to C-STC-OFDM with no BER deterioration. Moreover, as compared to the 16QAM-OFDM system, the proposed M-STC-OFDM system reduces the signal-to-noise-ratio (SNR) by 3.8 dB to transmit the same amount of data.

preprint2019arXiv

Spin splitting and strain in epitaxial monolayer WSe$_2$ on graphene

We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was $Δ_\mathrm{SO}=0.469\pm0.008$ eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer WSe$_{2}$ to be $a_\mathrm{WSe_2}=3.2757\pm0.0008 \mathrm{Å}$. This indicates a lattice compression of -0.19 % from bulk WSe$_{2}$. By using experimentally determined graphene lattice constant ($a_\mathrm{MLG}=2.4575\pm0.0007 \mathrm{Å}$), we found that a 3$\times$3 unit cell of the slightly compressed WSe$_{2}$ is perfectly commensurate with a 4$\times$4 graphene lattice with a mismatch below 0.03 %, which could explain why the monolayer WSe$_{2}$ is compressed on MLG. From XRD and first-principles calculations, however, we conclude that the observed size of strain is negligibly small to account for a discrepancy in $Δ_\mathrm{SO}$ found between exfoliated and epitaxial monolayers in earlier ARPES. In addition, angle-resolved, ultraviolet and X-ray photoelectron spectroscopy shed light on the band alignment between WSe$_{2}$ and MLG/SiC and indicate electron transfer from graphene to the WSe$_{2}$ monolayer. As further revealed by atomic force microscopy, the WSe$_{2}$ island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of WSe$_{2}$ favors the weak van der Waals interactions with graphene while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.