Researcher profile

A. Mering

A. Mering contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2009arXiv

Simulation of a quantum phase transition of polaritons with trapped ions

We present a novel system for the simulation of quantum phase transitions of collective internal qubit and phononic states with a linear crystal of trapped ions. The laser-ion interaction creates an energy gap in the excitation spectrum, which induces an effective phonon-phonon repulsion and a Jaynes-Cummings-Hubbard interaction. This system shows features equivalent to phase transitions of polaritons in coupled cavity arrays. Trapped ions allow for easy tunabilty of the hopping frequency by adjusting the axial trapping frequency, and the phonon-phonon repulsion via the laser detuning and intensity. We propose an experimental protocol to access all observables of the system, which allows one to obtain signatures of the quantum phase transitions even with a small number of ions.

preprint2008arXiv

Ultracold bosons in disordered superlattices: Mott-insulators induced by tunneling

We analyse the phase diagram of ultra-cold bosons in a one-dimensional superlattice potential with disorder using the time evolving block decimation algorithm for infinite sized systems (iTEBD). For degenerate potential energies within the unit cell of the superlattice loophole-shaped insulating phases with non-integer filling emerge with a particle-hole gap proportional to the boson hopping. Adding a small amount of disorder destroys this gap. For not too large disorder the loophole Mott regions detach from the axis of vanishing hopping giving rise to insulating islands. Thus the system shows a transition from a compressible Bose-glass to a Mott-insulating phase with increasing hopping amplitude. We present a straight forward effective model for the dynamics within a unit cell which provides a simple explanation for the emergence of Mott-insulating islands. In particular it gives rather accurate predictions for the inner critical point of the Bose-glass to Mott-insulator transition.