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A. M. Saitta

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Published work

3 published item(s)

preprint2014arXiv

Ionic ammonia ice

We report experimental and theoretical evidence that solid molecular ammonia becomes unstable at room temperature and high pressures and transforms into an ionic crystalline form. This material has been characterised in both hydrogenated NH3 and deuterated ND3 ammonia samples up to about 180 and 200 GPa, respectively, by infrared absorption, Raman spectroscopy and x-ray diffraction. The presence of a new, strong IR absorption band centered at 2500 cm-1 in NH3 (1900 cm-1 in ND3) signals the ionization of ammonia molecules into NH2- and NH4+ ions, in line with previous theoretical predictions. We find experimental evidence for a coexistence of two crystalline ionic forms, which our ab-initio structure searches predict to be the most stable at the relevant pressures. The ionic crystalline form of ammonia is stable at low temperatures, which contrasts with the behaviour of water in which no equivalent crystalline ionic phase has been found.

preprint1996arXiv

Phonon Softening and Elastic Instabilities in the Cubic-to-Orthorhombic Structural Transition of CsH

The cubic-to-orthorhombic structural transition occurring in CsH at a pressure of about 17 GPa is studied by ab initio calculations. The relative stability of the competing structures and the transition pressure are correctly predicted. We show that this pressure-induced first-order transition is intimately related to a displacive second-order transition which would occur upon application of a shear strain to the (110) planes. The resulting instability is rationalized in terms of the pressure-induced modifications of the electronic structure.

preprint1995arXiv

Ab-initio Molecular Dynamics study of electronic and optical properties of silicon quantum wires: Orientational Effects

We analyze the influence of spatial orientation on the optical response of hydrogenated silicon quantum wires. The results are relevant for the interpretation of the optical properties of light emitting porous silicon. We study (111)-oriented wires and compare the present results with those previously obtained within the same theoretical framework for (001)-oriented wires [F. Buda {\it et al.}, {\it Phys. Rev. Lett.} {\bf 69}, 1272, (1992)]. In analogy with the (001)-oriented wires and at variance with crystalline bulk silicon, we find that the (111)-oriented wires exhibit a direct gap at ${\bf k}=0$ whose value is largely enhanced with respect to that found in bulk silicon because of quantum confinement effects. The imaginary part of the dielectric function, for the external field polarized in the direction of the axis of the wires, shows features that, while being qualitatively similar to those observed for the (001) wires, are not present in the bulk. The main conclusion which emerges from the present study is that, if wires a few nanometers large are present in the porous material, they are optically active independently of their specific orientation.