Researcher profile

A. L. Kholkin

A. L. Kholkin contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Local electronic transport across probe/ionic conductor interface in scanning probe microscopy

Charge carrier transport through the probe-sample junction can have substantial consequences for outcomes of electrical and electromechanical atomic-force-microscopy (AFM) measurements. For understanding physical processes under the probe, we carried out conductive-AFM (C-AFM) measurements of local current-voltage (I-V) curves as well as their derivatives on samples of a mixed ionic-electronic conductor Li1-xMn2O4 and developed an analytical framework for the data analysis. The implemented approach discriminates between contributions of a highly resistive sample surface layer and bulk with the account of ion redistribution in the field of the probe. It was found that with increasing probe voltage, the conductance mechanism in the surface layer transforms from Pool-Frenkel to space-charge-limited current. The surface layer significantly alters the ion dynamics in the sample bulk under the probe, which leads, in particular, to a decrease of the effective electromechanical AFM signal associated with the ionic motion in the sample. The framework can be applied for the analysis of mechanisms of electronic transport across the probe/sample interface as well as the role of the charge transport in the electric field distribution, mechanical, and other responses in AFM measurements of a broad spectrum of conducting materials.

preprint2013arXiv

Direct and converse magnetoelectric effects in Metglas/LiNbO3/Metglas trilayers

Electromechanical and magnetoelectric properties of Metglas/LiNbO3/Metglas trilayers have been studied in the frequency range from 20 Hz to 0.4 MHz. A trilayer of Metglas/PMN-PT/Metglas prepared in the same way was used as a reference. Though PMN-PT has much larger charge piezocoefficients than LiNbO3 (LNO), the direct magnetoelectric voltage coefficient is found to be comparable in both trilayers due to the much lower dielectric permittivity of LNO. The magnitude of the direct magnetoelectric effect in the LNO trilayers is about 0.4 V/cm*Oe in the quasistatic regime and about 90 V/cm*Oe at electromechanical resonance. Calculations show that the magnetoelectric properties can be significantly improved (up to 500 V/cm*Oe) via controlling the cut angle of LNO, choosing the appropriate thickness ratio of the ferroelectric/ferromagnetic layers, and a better bonding between Metglas and LNO. Advantages of using LiNbO3-type ferroelectrics in magnetoelectric composites are discussed.