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A. K. Ghosh

A. K. Ghosh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conhep-exphysics.ins-det

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Published work

11 published item(s)

preprint2019arXiv

Room temperature large spontaneous exchange bias in hard-soft antiferromagnetic composite BiFeO3-TbMnO3

We report the presence of giant spontaneous exchange bias (HSEB) in a hard and soft antiferromagnetic composite of BiFeO3-TbMnO3 (BFO-TMO in 7:3 and 8:2 ratio). The HSEB varies between 5-778Oe, but persists up to room temperature with a maximum near a spin reorientation transition temperature observed from magnetization vs. temperature measurement in Zero-field cooled (ZFC) and Field cooled (FC) modes. Isothermal remnant magnetization measurements at room temperature indicate the presence of an interfacial layer of a 2 dimensional dilute antiferromagnet in a field (2D DAFF). A stable value of the exchange bias has been observed via training effect measurements which signify the role of interfacial exchange coupling in the system. Based on the experimental results we explain the presence of the giant spontaneous exchange bias on the basis of a strong strain-mediated magnetoelectriccoupling induced exchange interaction and the creation of 2D DAFF layer at the interface. Theproperties of this layer are defined by canting and pinning of BFO spins at the interface with TMO due to Fe and Mn interaction. X-ray Magnetic Circular Dichroism (XMCD) confirms the presence of canted antiferromagnetic ordering of BiFeO3, charge transfer between Mn ions and different magnetically coupled layers which play vital role in getting the exchange bias.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators

Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and thermoelectric power measurements. Carrier mobility decreases with the doping of Cu which provides evidence of the movement of Fermi level from bulk conduction band to the bulk valence band. Thermoelectric power also increaseswith doping of Cu.Moreover linear magnetoresistance (LMR) has been observed at high magnetic field in pure Bi2Te3 which is associated to the gapless topological surface states protected by time reversal symmetry (TRS), whereas doping of Cu breaks TRS and an opening of band gap occurs which quenches the LMR.

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preprint2016arXiv

Significant enhancement of compositional and superconducting homogeneity in Ti rather than Ta-doped Nb3Sn

Nb3Sn wires are now very close to their final optimization but despite its classical nature, detailed understanding of the role of Ta and Ti doping in the A15 is not fully understood. Long thought to be essentially equivalent in their influence on Hc2, they were interchangeably applied. Here we show that Ti produces significantly more homogeneous chemical and superconducting properties. Despite Ta-doped samples having a slightly higher Tc onset in zero-field, they always have a wider Tc-distribution. In particular, whereas the Ta-doped A15 has a Tc-distribution extending from 18 down to 5-6 K (the lowest expected Tc for the binary A15 phase), the Ti-doped samples have no A15 phase with Tc below 12 K. The much narrower Tc distribution in the Ti-doped samples has a positive effect on their in-field Tc-distribution too, leading to an extrapolated Hc2(0) 2 Tesla larger than the Ta-doped one. Ti-doping also appears to be very homogeneous even when the Sn content is reduced in order to inhibit breakdown of the diffusion barriers in very high Jc conductors. The enhanced homogeneity of the Ti-doped samples appears to result from its assistance of rapid diffusion of Sn into the filaments and by its incorporation into the A15 phase interchangeably with Sn on the Sn sites of the A15 phase.

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preprint2015arXiv

Local structure surrounding V sites in Co doped ZnV2O4

Co doped ZnV2O4 has been investigated by Synchrotron X-ray diffraction, Magnetization measurement and Extended X-ray absorption fine structure (EXAFS) analysis. With Co doping in the Zn site the system moves towards the itinerant electron limit. From Synchrotron and magnetization measurement it is observed that there is an effect in bond lengths and lattice parameters around the magnetic transition temperature. The EXAFS study indicates that Co ion exists in the High spin state in Co doped ZnV2O4.

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preprint2014arXiv

Chemical Pressure effect at the boundary of Mott insulator and itinerant electron limit of Spinel Vanadates

The chemical pressure effect on the structural, transport, magnetic and electronic properties (by measuring X-ray photoemission spectroscopy) of ZnV2O4 has been investigated by doping Mn and Co on the Zinc site of ZnV2O4. With Mn doping the V-V distance increases and with Co doping it decreases. The resistivity and thermoelectric power data indicate that as the V-V distance decreases the system moves towards Quantum Phase Transition. The transport data also indicate that the conduction is due to the small polaron hopping. The chemical pressure shows the non-monotonous behaviour of charge gap and activation energy. The XPS study also supports the observation that with decrease of the V-V separation the system moves towards Quantum Phase Transition. On the other hand when Ti is doped on the V-site of ZnV2O4 the metal-metal distance decreases and at the same time the TN also increases.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of dilution of both A- and B- sites on the multiferroic properties of spinal Mott insulators

The structural, magnetic, electrical and transport properties of FeV2O4, by doping Li and Cr ions respectively in A and B sites, have been studied. Dilution of A-site by Li doping increases the ferri-magnetic ordering temperature and decreases the ferroelectric transition temperature. This also decreases the V-V distances which in effect increases the A-V coupling. This increased A-V coupling dominates over the decrease in A-V coupling due to doping of non-magnetic Li. On the other hand, Cr doping increases the ferri-magnetic ordering temperature but does not alter the ferroelectric transition temperature which is due to the fact that the polarization origin to the presence of almost non-substituted regions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of Li doping on magnetic and transport properties of CoV2O4 and FeV2O4

The structural, magnetic and transport properties have been studied of Li doped CoV2O4 and FeV2O4. Li doping increases the ferri-magnetic ordering temperature of both the samples but decreases the spin-glass transition temperature of CoV2O4. The Li-doping decreases the V-V distance which in effect increases the A-V coupling. Thus the increased A-V coupling dominate over the decrease in A-V coupling due to doping of non-magnetic Li.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of Zn doping on the Magneto-Caloric effect and Critical Constants of Mott Insulator MnV2O4

X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV2O4 have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents \b{eta}, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.

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preprint2013arXiv

Effect of Heavy-Ion Irradiation on Superconductivity in Single Crystals of Ba0.6K0.4Fe2As2 Pnictide Superconductor

The London penetration depth was measured in optimally doped Ba0.6K0.4Fe2As2 crystals, with and without columnar defects produced by 1.4 GeV 208Pb irradiation. The low temperature behavior of unirradiated samples was consistent with a fully gapped superconducting state with a minimum energy gap delta_min/(k_B T_C) = 1. Similar gap values were observed for irradiation levels corresponding to mean column-column separations of 32 nm and 22 nm. At very high irradiation levels (column-column separation of 10 nm) a T^2 power law was observed below Tc/3, most likely due to elevated scattering. Neither the location nor the sharpness of the superconducting transition was affected by irradiation. The data provides evidence for an s+/- pairing state.

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preprint2012arXiv

First Muon-Neutrino Disappearance Study with an Off-Axis Beam

We report a measurement of muon-neutrino disappearance in the T2K experiment. The 295-km muon-neutrino beam from Tokai to Kamioka is the first implementation of the off-axis technique in a long-baseline neutrino oscillation experiment. With data corresponding to 1.43 10**20 protons on target, we observe 31 fully-contained single muon-like ring events in Super-Kamiokande, compared with an expectation of 104 +- 14 (syst) events without neutrino oscillations. The best-fit point for two-flavor nu_mu -> nu_tau oscillations is sin**2(2 theta_23) = 0.98 and |Δm**2_32| = 2.65 10**-3 eV**2. The boundary of the 90 % confidence region includes the points (sin**2(2 theta_23),|Δm**2_32|) = (1.0, 3.1 10**-3 eV**2), (0.84, 2.65 10**-3 eV**2) and (1.0, 2.2 10**-3 eV**2).

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Measurements of the T2K neutrino beam properties using the INGRID on-axis near detector

Precise measurement of neutrino beam direction and intensity was achieved based on a new concept with modularized neutrino detectors. INGRID (Interactive Neutrino GRID) is an on-axis near detector for the T2K long baseline neutrino oscillation experiment. INGRID consists of 16 identical modules arranged in horizontal and vertical arrays around the beam center. The module has a sandwich structure of iron target plates and scintillator trackers. INGRID directly monitors the muon neutrino beam profile center and intensity using the number of observed neutrino events in each module. The neutrino beam direction is measured with accuracy better than 0.4 mrad from the measured profile center. The normalized event rate is measured with 4% precision.

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