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A. G. Rybkin

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Published work

2 published item(s)

preprint2022arXiv

Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$

The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals (SvdW) distance between the first and second septuple layers (SLs), (ii) the magnetic moment on Mn atoms, (iii) the spin-orbit coupling (SOC) strength for the surface Te and Bi atoms and related changes in the localization of the topological surface states (TSSs). It was shown that all these factors may change the gap width at the DP in a wide range from 5 to $\sim$90~meV. We show that the Dirac gap variation is mainly determined by the corresponding changes in the TSSs spatial distribution. The best agreement between the presented experimental data (with the Dirac gaps between $\sim$15 and 55~meV) and the calculations takes place for a slightly compressed SvdW interval (of about -3.5~\% compared to the bulk value) with modified SOC for surface atoms (that can occur in the presence of various defects in the near-surface region). We show that upon changing the values of the SvdW interval and surface SOC strength the TSSs spatial distribution shifts between the SLs with opposite magnetizations, which leads to a non-monotonic change in the Dirac gap size.

preprint2013arXiv

Spin structure of Graphene/Pt interface for spin current formation and induced magnetization in deposited (Ni-Fe)-nanodots

Spin electronic structure of graphene pi-states and Pt 5d-states for the Graphene/Pt interface has been investigated. Here, we report a large induced spin-orbit splitting (~70-100 meV) of graphene pi-states with formation of non-degenerated Dirac-cone spin states at the K-point of the BZ crossed with spin-polarized Pt 5d-states at Fermi level that opens up a possibility for creation of new spintronics devices. We propose to use this spin structure for formation of spin current with spin locked perpendicular to the momentum for induced remagnetization of the (Ni-Fe)-nanodots arranged atop the interface. Theoretical estimations of the spin current created at the Graphene/Pt interface and the induced intrinsic effective magnetic field leading to the in-plane remagnetization of the NiFe-nanodots due to spin-orbit torque effect are presented. By micromagnetic modeling based on experimentally observed spin-orbit splitting we demonstarte that the induced intrinsic magnetic field might be effectively used for magnetization swithching of the deposited (Ni-Fe)-nanodots.