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A. D. C. Viegas

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Published work

2 published item(s)

preprint2014arXiv

Quantifying magnetic anisotropy dispersion: Theoretical and experimental study of the magnetic properties of anisotropic FeCuNbSiB ferromagnetic films

The Stoner-Wohlfarth model is a traditional and efficient tool to calculate magnetization curves and it can provides further insights on the fundamental physics associated to the magnetic properties and magnetization dynamics. Here, we perform a theoretical and experimental investigation of the quasi-static magnetic properties of anisotropic systems. We consider a theoretical approach which corresponds to a modified version of the Stoner-Wohlfarth model to describe anisotropic systems and a distribution function to express the magnetic anistropy dispersion. We propose a procedure to calculate the magnetic properties for the anisotropic case of the SW model from experimental results of the quadrature of magnetization curves, thus quantifying the magnetic anisotropy dispersion. To test the robustness of the approach, we apply the theoretical model to describe the quasi-static magnetic properties of amorphous FeCuNbSiB ferromagnetic films. We perform calculations and directly compare theoretical results with longitudinal and transverse magnetization curves measured for the films. Thus, our results provide experimental evidence to confirm the validity of the theoretical approach to describe the magnetic properties of anisotropic amorphous ferromagnetic films, revealed by the excellent agreement between numerical calculation and experimental results.

preprint2011arXiv

Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds.