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Researcher profile

A. Bertoni

A. Bertoni contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2021arXiv

Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology

Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on Si pMOSFETs offers great potentialities in terms of integration with the control electronics and long-term scalability. Moreover, the future down scaling of these devices will possibly improve the performance of both the classical (control) and quantum components of such monolithically integrated circuits. Here we use a multi-scale approach to simulate a hole-spin qubit in a down scaled Si-channel pMOSFET, whose structure is based on a commercial 22nm fully-depleted silicon-on-insulator device. Our calculations show the formation of well defined hole quantum dots within the Si channel, and the possibility of a general electrical control, with Rabi frequencies of the order of 100 MHz for realistic field values. Our calculations demonstrate the crucial role of the channel aspect ratio, and the presence of a favorable parameter range for the qubit manipulation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropy of the spin-orbit coupling driven by a magnetic field in InAs nanowires

We use the $\mathbf{k} \cdot \mathbf{p}$ theory and the envelope function approach to evaluate the Rashba spin-orbit coupling induced in a semiconductor nanowire by a magnetic field at different orientations, taking explicitely into account the prismatic symmetry of typical nano-crystals. We make the case for the strongly spin-orbit-coupled InAs semiconductor nanowires and investigate the anisotropy of the spin-orbit constant with respect to the field direction. At sufficiently high magnetic fields perpendicular to the nanowire, a 6-fold anisotropy results from the interplay between the orbital effect of field and the prismatic symmetry of the nanowire. A back-gate potential, breaking the native symmetry of the nano-crystal, couples to the magnetic field inducing a 2-fold anisotropy, with the spin-orbit coupling being maximized or minimized depending on the relative orientation of the two fields. We also investigate in-wire field configurations, which shows a trivial 2-fold symmetry when the field is rotated off the axis. However, isotropic spin-orbit coupling is restored if a sufficiently high gate potential is applied. Our calculations are shown to agree with recent experimental analysis of the vectorial character of the spin-orbit coupling for the same nanomaterial, providing a microscopic interpretation of the latter.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unintentional high density p-type modulation doping of a GaAs/AlAs core-multi-shell nanowire

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an \emph{unintentional} p-type doping. Magneto-optical studies of such a GaAs/AlAs core multi-shell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1~nm GaAs layer in the shell. Micro-photoluminescence in high magnetic field shows a clear signature of avoided crossings of the $n=0$ Landau level emission line with the $n=2$ Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large 2D hole density in the structure.

0 citations0 reviewsNo code linkedOpen access