Researcher profile

A. B. Chen

A. B. Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Single and multiple doping effects on electron transport in zigzag silicene nanoribbons

A nonequilibrium Green's function technique combined with density functional theory is used to study the spin-dependent electronic band structure and transport properties of zigzag silicene nanoribbons (ZSiNRs) doped with aluminum (Al) or phosphorus (P) atoms. The presence of a single Al or P atom induces quasibound states in ZSiNRs that can be observed as new dips in the electron conductance. The Al atom acts as an acceptor whereas the P atom acts as a donor when it is placed at the center of the ribbon. This behavior is reversed when the dopant is placed on the edges. Accordingly, an acceptor-donor transition is observed in ZSiNRs upon changing the dopant's position. Similar results are obtained when two silicon atoms are replaced by two impurities (Al or P atoms) but the conductance is generally modified due to the impurity-impurity interaction. When the doping breaks the two-fold rotational symmetry about the central line, the transport becomes spin dependent.

preprint2014arXiv

Vacancy Effects on Electric and Thermoelectric Properties of Zigzag Silicene Nanoribbons

We study the crystal reconstruction in the presence of monovacancies (MVs), divacancies (DVs) and linear vacancies (LVs) in a zigzag silicene nanoribbon (ZSiNR) with transversal symmetry. Their influence on the electric and thermoelectric properties is assessed by the density functional theory combined with the nonequilibrium Green's functions. In particular, we focus on the spin resolved conductance, magnetoresistance and current-voltage curves. A 5-atom-ring is formed in MVs, a 5-8-5 ring structure in DVs, and a 8-4-8-4 ring structure in LVs. The linear conductance becomes strongly spin dependent when the transversal symmetry is broken by vacancies especially if they are located on the ribbon's edges. The giant magnetoresistance can be smeared by asymmetric vacancies. Single spin negative differential resistance may appear in the presence of LVs and asymmetric MVs or DVs. A strong spin Seebeck effect is expected at room temperature in ZSiNRs with LVs.