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A. Ahmadi Fouladi

A. Ahmadi Fouladi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2014arXiv

Effects of impurity on tunnel magnetoresistance in a ferromagnetic electrode/carbon nanotube/ferromagnetic electrode junctio

Effects of impurity on the spin-dependent transport in a single wall carbon nanotube spin-valve, as ferromagnetic electrode/carbon nanotube/ferromagnetic electrode model junction is numerically investigated. Using a generalized Green's function method and the Landauer-Buttiker formalism, the impurity conditions are determined by randomly substitution of carbon atoms in the honeycomb carbon nanotube lattice by nitrogen and boron atoms. We have found that transport characteristics, including the spin-dependent current and tunnel magnetoresistance are strongly influenced by the impurity effects. We think that the results of the present report could be useful for designing the future spintronic devices.

preprint2014arXiv

Quantum interference effects on the noise power in the CNT/aGNR/CNT junction

Based on tight-binding model and a generalized Green's function method in Landauer-Büttiker formalism, the effects of quantum interference (QI) on the noise power and Fano factor of an armchair graphene nanoribbon (aGNR) sandwiched between infinite single wall carbon nanotube (SWCNT) as a CNT/aGNR/CNT system are numerically investigated. In this work, changing the aGNR to CNT electrodes contact positions and applying the magnetic field as two sources of QI are considered. We have found different Fano-resonance and anti-resonance peaks on the transmission probability in the presence of QI sources that show profound effects on the current-voltage characteristics and noise power. Our results also show that the shot noise characteristic, either in the Poisson limit ($F=1$) or sub-Poisson limit ($F<1$), and also maximum value of the Fano factor strongly depend on the aGNR to CNT electrodes contact positions and the magnetic field strength. These results can be useful for designing the future nano-electronic devices.