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A. A. Tonkikh

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2 publications

preprint2022arXiv

Activated hopping transport in nematic conducting aerogel at low temperatures

The transport properties of nematic aerogels, which consist of highly oriented Al2_2O3⋅_3\cdotSiO2_2 nanofibers coated with a graphene shell with a large number of defects, are studied. The temperature dependences of the electrical resistivity in the range of 9-40K strictly follow the formula derived to describe the variable range hopping (VRH) conductivity, in which exponent αα changes from 0.4 to 0.9 when the number of layers in the graphene shell decreases from 4-6 to 1-2. The dependence of αα on the shell thickness can be explained by a simultaneous change in the dimensionality of hopping transport and the character of the energy dependence of the density of localized states near the Fermi level. The fact that αα approaches unity at the minimum graphene shell thickness indicates a gradual transition from VRH transport to nearest neighbor hopping (NNH) transport. The magnetoresistance measured at T = 4.2 K is negative, increases significantly with decreasing graphene shell thickness, and is approximated by a formula for the case of weak localization with a good accuracy. The phase coherence lengths are in a reasonable relation with the graphene grain sizes. The conducting aerogels under study complement the well-known set of materials that exhibit hopping electron transport at low temperatures, which is characteristic of media with strong carrier localization, and also a negative magnetoresistance, which usually manifests itself under weak localization conditions.

preprint2015arXiv

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.

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