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A. A. Kudryavtsev

A. A. Kudryavtsev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-conphysics.plasm-ph

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Published work

4 published item(s)

preprint2020arXiv

Boundary conditions for drift-diffusion equations in gas-discharge plasmas

This paper develops a general approach to the derivation of the boundary conditions for hydrodynamic equations for charged and neutral plasma components. It includes both a well-known classical case for pure diffusion, and considers the expressions for diffusion and drift together - for an absorbing (neutralizing) wall with partial reflection and the possible emission of plasma components. Some unclear and controversial terms found in the existing literature are clarified. Several examples of applications of the results, which illustrate the properties of boundary conditions for electrons and ions, are calculated and analyzed.

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preprint2012arXiv

Fractional quantum conductance staircase of edge hole channels in silicon quantum wells

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, Gxx, as a function of the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

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preprint2009arXiv

Spin Transistor and Quantum Spin Hall Effects in CdBxF2-x - p-CdF2 - CdBxF2-x Sandwich Nanostructures

Planar CdBxF2-x - p-CdF2 - CdBxF2-x sandwich nanostructures prepared on the surface of the n-type CdF2 bulk crystal are studied to register the spin transistor and quantum spin Hall effects. The current-voltage characteristics of the ultra-shallow p+-n junctions verify the CdF2 gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF2 quantum well confined by the CdBxF2-x delta-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdBxF2-x delta-barriers. The value of the superconductor energy gap, 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.

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